BSC020N03LSGATMA1 vs BSC011N03LSATMA1 Comparaison
Comparaison détaillée côte à côte de BSC020N03LSGATMA1 par Infineon et BSC011N03LSATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 ✓ ActifComparaison des spécifications
| Paramètre | BSC020N03LSGATMA1 | BSC011N03LSATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,42 | $0,54 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 28 A | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | 100 A (TC) |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.2 V (typical range, per datasheet) | 1.0 V to 2.2 V (typ 1.6 V) |
| On-State Resistance (RDS(on)) at VGS=10V | approximately 2.0 mOhm | 1.1 mOhm (typ) |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc=25C | 96 W | — |
| Plage de température de fonctionnement | -55 C to +150 C (junction) | -55C to +150C |
| Boîtier / Format | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) | — |
| Type de montage | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | 1 (per JEDEC J-STD-020, per Infineon datasheet) | 1 |
| Product Series | — | OptiMOS 30V |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TA=25C | — | 37 A |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (PD) at TC=25C | — | 96 W |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Boîtier | — | PG-TDSON-8-1 (SuperSO8) |