BSC020N03LSGATMA1 vs BSC011N03LSATMA1 Comparação
Comparação detalhada lado a lado de BSC020N03LSGATMA1 por Infineon e BSC011N03LSATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 ✓ AtivoComparação de especificações
| Parâmetro | BSC020N03LSGATMA1 | BSC011N03LSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,42 | $0,54 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 28 A | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | 100 A (TC) |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.2 V (typical range, per datasheet) | 1.0 V to 2.2 V (typ 1.6 V) |
| On-State Resistance (RDS(on)) at VGS=10V | approximately 2.0 mOhm | 1.1 mOhm (typ) |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc=25C | 96 W | — |
| Faixa de temperatura de operação | -55 C to +150 C (junction) | -55C to +150C |
| Encapsulamento / Caixa | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | — |
| Status RoHS | Compliant | Compliant |
| Nível MSL | 1 (per JEDEC J-STD-020, per Infineon datasheet) | 1 |
| Product Series | — | OptiMOS 30V |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TA=25C | — | 37 A |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (PD) at TC=25C | — | 96 W |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Encapsulamento | — | PG-TDSON-8-1 (SuperSO8) |