BSC050N04LSGATMA1 vs BSC011N03LSTATMA1 Comparaison
Comparaison détaillée côte à côte de BSC050N04LSGATMA1 par Infineon et BSC011N03LSTATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSC050N04LSGATMA1 | BSC011N03LSTATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | NRND |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,41 | $1,55 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | — |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 57 W | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Technology | OptiMOS 3 (trench MOSFET) | Trench MOSFET |
| Boîtier | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TDSON-8 FL (8-pin, exposed drain pad) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55C to +150C | — |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | 1 | [DATA_NEEDED: MSL rating] |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 39 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | — | 1.1 mOhm (typical 0.9 mOhm) |
| Gate-Source Threshold Voltage VGS(th) typ | — | 2 V |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) typ | — | 72 nC |
| Power Dissipation at TA=25C | — | 3 W |
| Power Dissipation at TC=25C | — | 115 W |
| Température de jonction en fonctionnement | — | -55C to +150C |
| Configuration | — | Single with built-in diode |