BSC050N04LSGATMA1 vs BSC011N03LSTATMA1 비교

다음의 상세 나란히 비교: BSC050N04LSGATMA1 제조: Infineon 및 BSC011N03LSTATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSC050N04LSGATMA1 BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 ✓ 활성

사양 비교

파라미터 BSC050N04LSGATMA1 BSC011N03LSTATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 NRND
재고 상태 In Stock In Stock
단가 (USD) $0.41 $1.55
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 40 V —
Gate-to-Source Voltage (VGS) ±20 V —
Continuous Drain Current at 25C (ID, Ta) 18 A —
Continuous Drain Current at 25C (ID, Tc) 85 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] [DATA_NEEDED: pulsed drain current]
Power Dissipation at Ta (PD) 2.5 W —
Power Dissipation at Tc (PD) 57 W —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at VGS=10V] —
On-State Resistance (RDS(on)) at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Technology OptiMOS 3 (trench MOSFET) Trench MOSFET
패키지 PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) PG-TDSON-8 FL (8-pin, exposed drain pad)
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -55C to +150C —
Avalanche Energy Rated Yes (single-pulse avalanche) —
RoHS 상태 Compliant Compliant
MSL 레벨 1 [DATA_NEEDED: MSL rating]
Manufacturer — Infineon Technologies
Series — OptiMOS
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25C — 39 A
Continuous Drain Current (ID) at TC=25C — 100 A
Static Drain-Source On-Resistance RDS(on) max at VGS=10V — 1.1 mOhm (typical 0.9 mOhm)
Gate-Source Threshold Voltage VGS(th) typ — 2 V
Gate-Source Voltage (VGS) max — +/-20 V
Total Gate Charge (Qg) typ — 72 nC
Power Dissipation at TA=25C — 3 W
Power Dissipation at TC=25C — 115 W
동작 접합 온도 — -55C to +150C
Configuration — Single with built-in diode

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