BSC050N04LSGATMA1 vs BSC011N03LSTATMA1 Сравнение
Подробное сравнение бок о бок BSC050N04LSGATMA1 от Infineon и BSC011N03LSTATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | BSC050N04LSGATMA1 | BSC011N03LSTATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | NRND |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,41 | $1,55 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | — |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 57 W | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Technology | OptiMOS 3 (trench MOSFET) | Trench MOSFET |
| Корпус | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TDSON-8 FL (8-pin, exposed drain pad) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55C to +150C | — |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | — |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | 1 | [DATA_NEEDED: MSL rating] |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 39 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | — | 1.1 mOhm (typical 0.9 mOhm) |
| Gate-Source Threshold Voltage VGS(th) typ | — | 2 V |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) typ | — | 72 nC |
| Power Dissipation at TA=25C | — | 3 W |
| Power Dissipation at TC=25C | — | 115 W |
| Рабочая температура перехода | — | -55C to +150C |
| Configuration | — | Single with built-in diode |