BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon
Référence : BSC0921NDIATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.24 | $124,00 |
| 500 | $0.98 | $490,00 |
| 1 000 | $0.82 | $820,00 |
| 5 000 | $0.68 | $3 400,00 |
BSC0921NDIATMA1 Présentation
Key parametric features include ultra-low gate charge (Qg) and output charge (Qoss), together with one of the lowest on-state resistances (RDS(on)) available in small footprint packages. This combination makes OptiMOS 25V the best-in-class choice for demanding synchronous buck converter designs where switching losses dominate. The dual-FET configuration integrates both high-side and low-side switches in a single package, reducing PCB area, parasitic loop inductance, and BOM count in point-of-load (POL) converters.
The BSC0921NDIATMA1's low gate charge directly translates into reduced driver losses and faster switching edges, while the low Qoss minimizes body-diode-related losses during dead-time transitions. The PG-TISON-8 package's exposed thermal pad and low thermal resistance enable efficient heat extraction from both die, supporting continuous high-current operation in space-constrained server and telecom boards. The 30V voltage rating provides comfortable margin above the 25V maximum operating drain voltage typical of 12V bus applications.
Typical applications include voltage regulator modules (VRMs) for server CPUs and memory, point-of-load converters in networking and telecom equipment, synchronous buck stages for graphics cards and FPGAs, and DC-DC blocks in distributed power architectures. The dual-die integration is particularly valuable in high-frequency (>500 kHz) designs where layout parasitics would otherwise erode efficiency.
When designing with this part, ensure the exposed pad is soldered to a sufficient copper pour to dissipate dual-die power at full load. Both MOSFET channels share the same thermal pad and are electrically independent, allowing flexible high-side/low-side or parallel-FET topologies. Designers should follow Infineon's PG-TISON-8 land pattern recommendations to maintain the datasheet's thermal and electrical performance.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Alternatives de remplacement direct pour BSC0921NDIATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec BSC0921NDIATMA1 (même facteur de forme et même empreinte) — différant par Package, Technology, Operating Temperature Range, Series, Drain-Source Voltage (VDS).
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
BSC0923NDIATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
BSZ031NE2LS5ATMA1
✅ Remplacement direct✓ En stock
$0.26 / unité
Voir la fiche technique →BSC0502NSIATMA1
✅ Remplacement direct✓ En stock
$0.85 / unité
Voir la fiche technique →BSC014N04LSATMA1
✅ Remplacement direct✓ En stock
$0.74 / unité
Voir la fiche technique →BSC097N06NSATMA1
✅ Remplacement direct✓ En stock
$0.38 / unité
Voir la fiche technique →BSC0921NDIATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Technology | OptiMOS 25V (N-channel) |
| Configuration | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 17 A (per channel) |
| Pulsed Drain Current (IDM) | 31 A (per channel, package-limited) |
| Total Power Dissipation (PD) | 1 W |
| Gate Charge (Qg) | Ultra-low (OptiMOS 25V family characteristic) |
| Output Charge (Qoss) | Ultra-low (OptiMOS 25V family characteristic) |
| Boîtier | PG-TISON-8 (8-pin, exposed pad) |
| Type de montage | Surface Mount |
| Température de fonctionnement | -55C to +150C (junction) |
| Statut RoHS | Compliant |
| Niveau MSL | 1 (per Infineon OptiMOS family) |
| Primary Application | Synchronous buck converters, VRMs, POL regulators |
Configuration des broches de BSC0921NDIATMA1
| Broche 1 | G1 — Gate of MOSFET 1 |
| Broche 2 | D1 — Drain of MOSFET 1 |
| Broche 3 | S1 — Source of MOSFET 1 |
| Broche 4 | S1 — Source of MOSFET 1 (low-side Kelvin) |
| Broche 5 | G2 — Gate of MOSFET 2 |
| Broche 6 | D2 — Drain of MOSFET 2 |
| Broche 7 | S2 — Source of MOSFET 2 |
| Broche 8 | S2 — Source of MOSFET 2 (low-side Kelvin) |
| Broche PAD | EP — Exposed thermal pad (electrically connected to source) |
Zone de fonctionnement sûr (per channel)
Applications typiques
BSC0921NDIATMA1 convient pour 6 applications: Server CPU/Memory VRM, Point-of-Load (POL) Converters, Telecom DC-DC Brick Converters, Graphics Card and GPU Power Stages, Industrial 24V Bus Synchronous Buck, Datacenter Hot-Swap Controllers.
Server CPU/Memory VRM
The BSC0921NDIATMA1's dual N-channel configuration is purpose-built for synchronous buck VRMs powering server CPUs and DDR memory. Each MOSFET channel handles 17A continuous (31A pulsed), well-matched to 30-60A multi-phase VRM stages where two phases can be combined per package. The OptiMOS 25V technology's ultra-low Qg (under 10 nC typical) reduces driver losses at 500 kHz+ switching frequencies, while the low Qoss minimizes body-diode reverse-recovery losses during dead-time. The PG-TISON-8 exposed pad enables direct thermal coupling to inner PCB copper layers, sustaining full-load operation in dense server blade designs where airflow is constrained.
Recommandé
Point-of-Load (POL) Converters
The BSC0921NDIATMA1 excels in 12V-input POL converters for ASICs, FPGAs, and SoCs in networking gear. Its 30V VDS rating provides safe margin on 12V nominal buses that can spike to 15-18V during transients. According to Infineon's OptiMOS 25V positioning, the part's combination of low RDS(on) and low gate charge delivers peak efficiency above 95% in 500 kHz-1 MHz synchronous buck topologies. The dual-die co-packaging cuts PCB area by ~40% versus discrete high-side/low-side layouts, critical for dense telecom line cards with dozens of POL rails.
Recommandé
Telecom DC-DC Brick Converters
In isolated telecom brick converters (48V-to-12V or 12V-to-3.3V intermediate bus), the BSC0921NDIATMA1 serves as the primary-side or secondary-side synchronous rectifier. The 30V VDS rating covers 12V bus designs with significant margin for ringing, while the low Qoss reduces switching losses in high-frequency isolated topologies. According to distributor listings, the part is widely used by telecom OEMs in 1/16th and 1/32nd brick form factors. The PG-TISON-8 package's small footprint (5x6mm) enables high power density in standardized DOSA brick outlines.
Recommandé
Graphics Card and GPU Power Stages
The BSC0921NDIATMA1's high current density and low switching losses make it a strong fit for GPU/graphics card voltage regulator stages, where transient response and thermal performance are paramount. Each channel's 17A continuous rating supports multi-phase GPU core power designs, with 2-3 packages per phase combining for 30-50A capability. According to Infineon's VRM application notes, the OptiMOS 25V family is validated for GPU load-step transient performance in the sub-microsecond range. The exposed pad enables thermal coupling to GPU VRM heatsinks, supporting sustained boost-clock operation.
Recommandé
Industrial 24V Bus Synchronous Buck
For industrial 24V bus systems (24V nominal, transients to 36V), the BSC0921NDIATMA1's 30V VDS rating requires careful transient suppression but works well in 24V-to-12V or 24V-to-5V intermediate stages. The dual-die integration is valuable in PLC and industrial controller power supplies where PCB area is at a premium. According to Infineon's industrial-grade portfolio documentation, OptiMOS 25V parts are qualified for industrial temperature ranges (-40C to +85C ambient), making the BSC0921NDIATMA1 suitable for factory automation equipment.
Recommandé
Datacenter Hot-Swap Controllers
The BSC0921NDIATMA1 can serve as the synchronous rectifier in datacenter hot-swap and OR-ing applications, where low RDS(on) minimizes conduction losses during steady-state operation. While its 30V rating limits it to 12V bus systems (not 48V), it excels in 12V distribution within rack-mounted servers and storage arrays. According to Infineon's power distribution guidance, the OptiMOS 25V family delivers the efficiency required for Energy Star and 80 Plus Titanium power supply targets. The PG-TISON-8 package is compatible with automated optical inspection (AOI) for high-volume server manufacturing.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour BSC0921NDIATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | BSC0923NDIATMA1 | BSZ031NE2LS5ATMA1 | BSC0502NSIATMA1 | BSC014N04LSATMA1 | BSC097N06NSATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TISON-8 | PG-TISON-8 - same | PG-TISON-8 - same | PG-TISON-8 - same | PG-TISON-8 - same | PG-TISON-8 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Configuration | Dual N-Channel | Dual N-Channel | Single N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 25 V | 25 V | 40 V | 60 V |
| Technology | OptiMOS 25V | OptiMOS 25V | OptiMOS 25V | OptiMOS5 25V | OptiMOS 40V | OptiMOS 60V |
| Gate Charge (Qg) | Ultra-low | Ultra-low | Ultra-low | Lower (OptiMOS5) | Low | Low |
| Primary Application | Server VRM, POL | Server VRM, POL | Single-FET applications | Next-gen VRM | 24V industrial bus | 48V telecom |
Principaux différenciateurs
- Dual N-channel MOSFETs in single PG-TISON-8 package (vs IRFH5020TRPBF (single N-channel, PQFN-8))
- OptiMOS 25V technology with optimized Qg and Qoss (vs BSC0502NSIATMA1 (OptiMOS5 25V))
- 30V VDS rating with 25V optimum operating point (vs BSC014N04LSATMA1 (40V VDS))
Notes de conception
The PG-TISON-8 package relies entirely on the exposed thermal pad (EP) for heat dissipation. For dual-die operation at full 17A per channel, estimate the total dissipation as P_total = 2 * I^2 * RDS(on). Estimated: at I=17A and RDS(on)~=5 mOhm per die, each die dissipates ~1.45W, totaling ~2.9W. Design at least 1 square inch of 2oz copper on inner PCB layers directly beneath the EP, with 8-12 thermal vias (0.3mm drill, 1mm pitch) connecting to the EP land. Without adequate thermal design, junction temperature can exceed 150C at full load, triggering thermal shutdown in adjacent circuitry.
Minimize the high-side-to-low-side gate-drive loop inductance by routing the gate-drive traces directly over the PG-TISON-8 package with the boot capacitor placed within 3mm of the high-side source pin (pin 3 or 7). Use 0.5mm-wide microstrip on the top layer with a continuous ground return path beneath. According to Infineon OptiMOS 25V application notes, loop inductance above 5 nH causes gate-ringing and potential shoot-through in the dead-time window. Place a 10-100 ohm gate-source resistor on each FET to dampen ringing.
Do not assume both MOSFET die share a common source - the BSC0921NDIATMA1 uses separate source pins (pins 3/4 for FET1, pins 7/8 for FET2) for true Kelvin-source gate drive. Tie pins 3-4 together and pins 7-8 together at the IC body, not at the controller, to avoid source-inductance-induced gate-drive degradation. Estimated: at 1 A/ns switching speed, even 2 nH of source inductance subtracts 2V from effective VGS, potentially dropping the FET out of saturation. Additionally, never exceed 30V VDS even during transient ringing - add a TVS clamp or RC snubber if the layout-induced overshoot exceeds 24V.
Follow Infineon's PG-TISON-8 land pattern recommendations exactly. The exposed pad requires a single large solder-mask-defined (SMD) pad with multiple thermal vias in a 3x3 array pattern. Use a 1:1 pad-to-mask ratio for the EP to maximize thermal coupling and avoid solder voiding. The drain pads (pins 2 and 6) carry high switching currents and should connect directly to the input/output copper planes with minimal trace impedance. According to Infineon packaging guidelines, use ENIG or OSP surface finish for best solderability of the EP.
Informations de conformité
RoHS and REACH compliance per Infineon product declaration. Halogen-free per Infineon OptiMOS 25V family datasheet. AEC-Q100 not applicable for this industrial/consumer-grade part - AEC-Q100 qualified variants are available with -Q1 suffix from Infineon.
