CGD65C025SP2 vs CGD65A055S2 Comparaison
Comparaison détaillée côte à côte de CGD65C025SP2 par Cambridge GaN Devices et CGD65A055S2 par Cambridge GaN Devices. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Cambridge GaN Devices
CGD65C025SP2 - 650V 25mΩ GaN HEMT 60A | Cambridge GaN Devices
CGD65C025SP2 ✓ ActifCambridge GaN Devices
CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
CGD65A055S2 ✓ ActifComparaison des spécifications
| Paramètre | CGD65C025SP2 | CGD65A055S2 |
|---|---|---|
| Marque | Cambridge GaN Devices | Cambridge GaN Devices |
| Catégorie | MOSFETs | Transistors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $4,10 | $2,85 |
| Manufacturer | Cambridge GaN Devices (CGD) | Cambridge GaN Devices |
| Part Number | CGD65C025SP2 | — |
| Type de transistor | N-Channel GaN HEMT (enhancement-mode, normally-off) | — |
| Gate Technology | ICeGaN® (no negative gate supply required) | ICeGaN™ (standard-driver compatible) |
| Drain-Source Voltage (V_DS max) | 650 V | — |
| Continuous Drain Current (I_D) | 60 A | — |
| On-Resistance (R_DS(on)) | 25 mΩ (typical) | — |
| Boîtier | BHDFN-9-1 (surface-mount, wettable flank) | 16-pin DFN 8x8 mm |
| Type de montage | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Operating Mode | Enhancement mode (normally-off) | Enhancement-mode (normally-off) |
| Material | GaN-on-Si (Gallium Nitride on Silicon) | — |
| Switching Frequency Suitability | High frequency (fast turn-on, easy paralleling) | — |
| Datasheet Status | Preliminary (May 2024) | — |
| Statut RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant (lead-free) |
| AEC-Q100 Qualification | unknown | — |
| Technology | — | GaN-on-Si HEMT (enhancement mode) |
| Drain-to-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 55 mΩ |
| Courant de drain continu (TC=25°C) | — | 27 A |
| Current Sense Pin | — | Yes (integrated CS output) |
| Integrated Protection Circuit | — | NL³ (non-linear low-loss) |
| Reverse Recovery Charge (Qrr) | — | 0 nC (zero, typical for GaN) |
| Channel Type | — | N-Channel |
| Polarity | — | Single FET |