CGD65C025SP2 vs CGD65A055S2 비교
다음의 상세 나란히 비교: CGD65C025SP2 제조: Cambridge GaN Devices 및 CGD65A055S2 제조: Cambridge GaN Devices. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Cambridge GaN Devices
CGD65C025SP2 - 650V 25mΩ GaN HEMT 60A | Cambridge GaN Devices
CGD65C025SP2 ✓ 활성Cambridge GaN Devices
CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
CGD65A055S2 ✓ 활성사양 비교
| 파라미터 | CGD65C025SP2 | CGD65A055S2 |
|---|---|---|
| 브랜드 | Cambridge GaN Devices | Cambridge GaN Devices |
| 카테고리 | MOSFETs | Transistors |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $4.10 | $2.85 |
| Manufacturer | Cambridge GaN Devices (CGD) | Cambridge GaN Devices |
| Part Number | CGD65C025SP2 | — |
| 트랜지스터 유형 | N-Channel GaN HEMT (enhancement-mode, normally-off) | — |
| Gate Technology | ICeGaN® (no negative gate supply required) | ICeGaN™ (standard-driver compatible) |
| Drain-Source Voltage (V_DS max) | 650 V | — |
| Continuous Drain Current (I_D) | 60 A | — |
| On-Resistance (R_DS(on)) | 25 mΩ (typical) | — |
| 패키지 | BHDFN-9-1 (surface-mount, wettable flank) | 16-pin DFN 8x8 mm |
| 실장 유형 | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Operating Mode | Enhancement mode (normally-off) | Enhancement-mode (normally-off) |
| Material | GaN-on-Si (Gallium Nitride on Silicon) | — |
| Switching Frequency Suitability | High frequency (fast turn-on, easy paralleling) | — |
| Datasheet Status | Preliminary (May 2024) | — |
| RoHS 상태 | [DATA_NEEDED: RoHS compliance status] | Compliant (lead-free) |
| AEC-Q100 Qualification | unknown | — |
| Technology | — | GaN-on-Si HEMT (enhancement mode) |
| Drain-to-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 55 mΩ |
| 연속 드레인 전류 (TC=25°C) | — | 27 A |
| Current Sense Pin | — | Yes (integrated CS output) |
| Integrated Protection Circuit | — | NL³ (non-linear low-loss) |
| Reverse Recovery Charge (Qrr) | — | 0 nC (zero, typical for GaN) |
| Channel Type | — | N-Channel |
| Polarity | — | Single FET |