DG409DJ+ vs DG409CJ+ Comparaison
Comparaison détaillée côte à côte de DG409DJ+ par Analog Devices et DG409CJ+ par Analog Devices. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | DG409DJ+ | DG409CJ+ |
|---|---|---|
| Marque | Analog Devices | Analog Devices |
| Catégorie | Interface ICs | Interface ICs |
| Statut du cycle de vie | Actif | Actif |
| Product Type | Dual 4-channel CMOS analog multiplexer | — |
| Multiplexer Configuration | 4:1 | Dual 4:1 (8-channel or dual 4-channel) |
| Number of Circuits | 2 circuits | 2 circuits |
| Number of Channels per Circuit | 4 channels | — |
| On-Resistance | 100 ohm | — |
| Supply Voltage Range | 5 V to 30 V | 5 V to 30 V |
| Maximum Charge Injection | 15 pC | — |
| Input Off-Leakage Current | Less than 5 nA at 85 C | — |
| ESD Protection | Greater than 2000 V | — |
| Boîtier | 16-pin PDIP | 16-pin DIP, 0.300 in (7.62 mm) lead pitch |
| Type de montage | Through-hole | Through-hole |
| Signal Conduction Direction | Bidirectional | — |
| Control Logic Compatibility | TTL/CMOS-compatible | — |
| Channel Matching | 8 ohm maximum | 8 ohm maximum |
| Flatness Over Signal Range | 9 ohm maximum | — |
| Primary Applications | Audio-signal routing, communication systems, data acquisition, guidance and control systems, sample-and-hold circuits, test equipment | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| REACH Status | [DATA_NEEDED: REACH status] | [DATA_NEEDED: REACH status] |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Maximum On-Resistance | — | 100 ohm |
| Switching Time | — | 150 ns |
| Maximum Supply Voltage | — | 30 V |
| Off Leakage Current | — | 500 pA |
| On-Resistance Flatness | — | 9 ohm maximum |
| Switching Configuration | — | Single-pole single-throw, 4:1 |
| Transition Behavior | — | Break-before-make |
| Technology | — | CMOS |
| Maximum Power Dissipation | — | 842 mW |
| AEC-Q100 Qualification | — | [DATA_NEEDED: AEC-Q100 qualification status] |