DG409DJ+ vs DG409CJ+ Сравнение
Подробное сравнение бок о бок DG409DJ+ от Analog Devices и DG409CJ+ от Analog Devices. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | DG409DJ+ | DG409CJ+ |
|---|---|---|
| Бренд | Analog Devices | Analog Devices |
| Категория | Interface ICs | Interface ICs |
| Статус жизненного цикла | Активен | Активен |
| Product Type | Dual 4-channel CMOS analog multiplexer | — |
| Multiplexer Configuration | 4:1 | Dual 4:1 (8-channel or dual 4-channel) |
| Number of Circuits | 2 circuits | 2 circuits |
| Number of Channels per Circuit | 4 channels | — |
| On-Resistance | 100 ohm | — |
| Supply Voltage Range | 5 V to 30 V | 5 V to 30 V |
| Maximum Charge Injection | 15 pC | — |
| Input Off-Leakage Current | Less than 5 nA at 85 C | — |
| ESD Protection | Greater than 2000 V | — |
| Корпус | 16-pin PDIP | 16-pin DIP, 0.300 in (7.62 mm) lead pitch |
| Тип монтажа | Through-hole | Through-hole |
| Signal Conduction Direction | Bidirectional | — |
| Control Logic Compatibility | TTL/CMOS-compatible | — |
| Channel Matching | 8 ohm maximum | 8 ohm maximum |
| Flatness Over Signal Range | 9 ohm maximum | — |
| Primary Applications | Audio-signal routing, communication systems, data acquisition, guidance and control systems, sample-and-hold circuits, test equipment | — |
| Статус RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| REACH Status | [DATA_NEEDED: REACH status] | [DATA_NEEDED: REACH status] |
| Диапазон рабочих температур | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Maximum On-Resistance | — | 100 ohm |
| Switching Time | — | 150 ns |
| Maximum Supply Voltage | — | 30 V |
| Off Leakage Current | — | 500 pA |
| On-Resistance Flatness | — | 9 ohm maximum |
| Switching Configuration | — | Single-pole single-throw, 4:1 |
| Transition Behavior | — | Break-before-make |
| Technology | — | CMOS |
| Maximum Power Dissipation | — | 842 mW |
| AEC-Q100 Qualification | — | [DATA_NEEDED: AEC-Q100 qualification status] |