IAUC120N06S5L015ATMA1 vs IAUCN08S7L033ATMA1 Comparaison
Comparaison détaillée côte à côte de IAUC120N06S5L015ATMA1 par Infineon et IAUCN08S7L033ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUC120N06S5L015ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,92 | $0,86 |
| Technology | N-Channel MOSFET (OptiMOS 5) | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID, Tc=25C) | 235 A | — |
| On-Resistance RDS(on) max (VGS=10 V) | 1.5 mΩ | — |
| Gate Charge (Qg, typ) | 88 nC | — |
| Power Dissipation (PD, Tc=25C) | 167 W | — |
| Plage de température de fonctionnement | -55C to +175C (Tj) | -55°C to +175°C (TJ) |
| Boîtier | PG-TDSON-8-43 (Surface Mount) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Type de montage | Surface Mount (exposed pad) | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V (typical Infineon OptiMOS 7 limit) |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020, typical for this package) |
| Drain-Source On-State Resistance Test Conditions | VGS = 10 V, ID = 50 A | — |
| Typical Application | Automotive DC-DC, battery switches, motor drives | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | Automotive OptiMOS 7 |
| Type de transistor | — | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |