IAUC120N06S5L015ATMA1 vs IAUCN08S7L033ATMA1 비교
다음의 상세 나란히 비교: IAUC120N06S5L015ATMA1 제조: Infineon 및 IAUCN08S7L033ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IAUC120N06S5L015ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.92 | $0.86 |
| Technology | N-Channel MOSFET (OptiMOS 5) | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID, Tc=25C) | 235 A | — |
| On-Resistance RDS(on) max (VGS=10 V) | 1.5 mΩ | — |
| Gate Charge (Qg, typ) | 88 nC | — |
| Power Dissipation (PD, Tc=25C) | 167 W | — |
| 동작 온도 범위 | -55C to +175C (Tj) | -55°C to +175°C (TJ) |
| 패키지 | PG-TDSON-8-43 (Surface Mount) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| 실장 유형 | Surface Mount (exposed pad) | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V (typical Infineon OptiMOS 7 limit) |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020, typical for this package) |
| Drain-Source On-State Resistance Test Conditions | VGS = 10 V, ID = 50 A | — |
| Typical Application | Automotive DC-DC, battery switches, motor drives | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | Automotive OptiMOS 7 |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |