IAUC120N06S5N011ATMA1 vs IAUCN08S7L033ATMA1 Comparaison
Comparaison détaillée côte à côte de IAUC120N06S5N011ATMA1 par Infineon et IAUCN08S7L033ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 ✓ Actif
Comparaison des spécifications
| Paramètre | IAUC120N06S5N011ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,62 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) | 120 A (Tc=25°C, Vgs=10V) | — |
| Pulsed Drain Current (Idm) | 310 A (Tj) | — |
| On-Resistance Rds(on) max | 1.1 mΩ at Vgs=10 V | — |
| Gate-Source Voltage (Vgs) max | ±20 V | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total value] | — |
| Power Dissipation (Pd) | 188 W (Tc=25°C) | — |
| Plage de température de fonctionnement | -55°C to +175°C (Tj) | -55°C to +175°C (TJ) |
| Boîtier | PG-TDSON-8-53 (SSO8 5x6 mm) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Type de montage | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant | — |
| Niveau MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for this package) |
| Series | — | Automotive OptiMOS 7 |
| Type de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |
| Technology | — | OptiMOS 7 trench MOSFET |
| Statut RoHS | — | Compliant |