IAUC120N06S5N011ATMA1 vs IAUCN08S7L033ATMA1 对比

详细并排对比 IAUC120N06S5N011ATMA1 出自 Infineon 和 IAUCN08S7L033ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC120N06S5N011ATMA1 IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon

IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon

IAUC120N06S5N011ATMA1 ✓ 量产中
Infineon
IAUCN08S7L033ATMA1 IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 ✓ 量产中

规格对比

参数 IAUC120N06S5N011ATMA1 IAUCN08S7L033ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.62 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-5 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) 120 A (Tc=25°C, Vgs=10V) —
Pulsed Drain Current (Idm) 310 A (Tj) —
On-Resistance Rds(on) max 1.1 mΩ at Vgs=10 V —
Gate-Source Voltage (Vgs) max ±20 V —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total value] —
Power Dissipation (Pd) 188 W (Tc=25°C) —
工作温度范围 -55°C to +175°C (Tj) -55°C to +175°C (TJ)
封装 PG-TDSON-8-53 (SSO8 5x6 mm) PG-TDSON-8-34 (SSO8, 5x6 mm²)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant —
MSL 等级 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020, typical for this package)
Series — Automotive OptiMOS 7
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tj — 130 A
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C — 118 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate-Source Voltage (VGS) max — ±20 V (typical Infineon OptiMOS 7 limit)
Qualification — Automotive Grade (per Infineon datasheet header)
Technology — OptiMOS 7 trench MOSFET
RoHS 状态 — Compliant

数据手册与资源

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