IAUC120N06S5N011ATMA1 vs IAUCN08S7L033ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5N011ATMA1 by Infineon and IAUCN08S7L033ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΞ© OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 β ActiveInfineon
IAUCN08S7L033ATMA1
IAUCN08S7L033ATMA1 - 80V 3.3mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5N011ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (Vdss) | 60 V | β |
| Continuous Drain Current (Id) | 120 A (Tc=25Β°C, Vgs=10V) | β |
| Pulsed Drain Current (Idm) | 310 A (Tj) | β |
| On-Resistance Rds(on) max | 1.1 mΞ© at Vgs=10 V | β |
| Gate-Source Voltage (Vgs) max | Β±20 V | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total value] | β |
| Power Dissipation (Pd) | 188 W (Tc=25Β°C) | β |
| Operating Temperature Range | -55Β°C to +175Β°C (Tj) | -55Β°C to +175Β°C (TJ) |
| Package | PG-TDSON-8-53 (SSO8 5x6 mm) | PG-TDSON-8-34 (SSO8, 5x6 mmΒ²) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Compliance | Compliant | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for this package) |
| Series | β | Automotive OptiMOS 7 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | β | 3.3 mΞ© |
| Continuous Drain Current (ID) at Tj | β | 130 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25Β°C | β | 118 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | β | Β±20 V (typical Infineon OptiMOS 7 limit) |
| Qualification | β | Automotive Grade (per Infineon datasheet header) |
| Technology | β | OptiMOS 7 trench MOSFET |
| RoHS Status | β | Compliant |