IKW20N60TFKSA1 vs IKW50N65H5FKSA1 Comparaison
Comparaison détaillée côte à côte de IKW20N60TFKSA1 par Infineon et IKW50N65H5FKSA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IKW20N60TFKSA1 | IKW50N65H5FKSA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | IGBTs | Transistors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,15 | $5,45 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IKW20N60TFKSA1 | — |
| Part Status | Active | — |
| IGBT Type | Trench Field Stop | — |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | — |
| Current - Collector (Ic) Max @ 25C | 40 A | — |
| Current - Collector (Ic) Continuous | 20 A | — |
| Power - Max | 166 W | — |
| Switching Energy (Eon+Eoff) | [DATA_NEEDED: switching energy value] | — |
| Vce(on) at Ic, Tj=25C | [DATA_NEEDED: Vce(sat) at rated condition] | — |
| Gate Charge (Qg) | [DATA_NEEDED: gate charge value] | — |
| Input Capacitance (Cies) | [DATA_NEEDED: input capacitance value] | — |
| Reverse Recovery Time (trr) of co-packaged diode | [DATA_NEEDED: trr value] | — |
| Td(on)/Td(off) | [DATA_NEEDED: turn-on/off delay times] | — |
| Operating Temperature Junction (Tj) | -40C to +175C | — |
| Boîtier / Format | TO-247-3 (PG-TO247-3-1) | — |
| Type de montage | Through Hole | Through Hole |
| Diode Configuration | Anti-parallel (co-packaged, full-rated) | — |
| Statut RoHS | Compliant | Compliant (per Infineon) |
| Technology Family | TRENCHSTOP IGBT3 | — |
| Product Type | — | IGBT Single Transistor |
| Technology | — | TRENCHSTOP 5 (H5 high-speed family) |
| Collector-Emitter Voltage (VCE) | — | 650 V |
| Continuous Collector Current (IC, TC=25C) | — | 80 A |
| Continuous Collector Current (IC, TC=100C) | — | 50 A |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: ICM value] |
| Maximum Power Dissipation (Ptot) | — | 305 W |
| Tension de saturation collecteur-émetteur (Vce(sat)) | — | 1.65 V at IC = 50 A |
| Gate-Emitter Voltage (VGE) max | — | 20 V (typical rating) |
| Gate Threshold Voltage (VGE(th)) | — | [DATA_NEEDED: VGE(th) value] |
| Built-in Diode | — | Yes, anti-parallel co-packaged diode |
| Operating Junction Temperature (Tj) | — | -40 C to +175 C (typical IGBT max) |
| Boîtier | — | TO-247 (PG-TO247-3), 3 pins |
| Packing | — | Tube (240 pcs/tube per Infineon product page) |
| Statut du cycle de vie | — | Active (per Infineon product page) |