IKW20N60TFKSA1 vs IKW50N65H5FKSA1 Сравнение
Подробное сравнение бок о бок IKW20N60TFKSA1 от Infineon и IKW50N65H5FKSA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IKW20N60TFKSA1 | IKW50N65H5FKSA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | IGBTs | Transistors |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,15 | $5,45 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IKW20N60TFKSA1 | — |
| Part Status | Active | — |
| IGBT Type | Trench Field Stop | — |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | — |
| Current - Collector (Ic) Max @ 25C | 40 A | — |
| Current - Collector (Ic) Continuous | 20 A | — |
| Power - Max | 166 W | — |
| Switching Energy (Eon+Eoff) | [DATA_NEEDED: switching energy value] | — |
| Vce(on) at Ic, Tj=25C | [DATA_NEEDED: Vce(sat) at rated condition] | — |
| Gate Charge (Qg) | [DATA_NEEDED: gate charge value] | — |
| Input Capacitance (Cies) | [DATA_NEEDED: input capacitance value] | — |
| Reverse Recovery Time (trr) of co-packaged diode | [DATA_NEEDED: trr value] | — |
| Td(on)/Td(off) | [DATA_NEEDED: turn-on/off delay times] | — |
| Operating Temperature Junction (Tj) | -40C to +175C | — |
| Корпус / Типоразмер | TO-247-3 (PG-TO247-3-1) | — |
| Тип монтажа | Through Hole | Through Hole |
| Diode Configuration | Anti-parallel (co-packaged, full-rated) | — |
| Статус RoHS | Compliant | Compliant (per Infineon) |
| Technology Family | TRENCHSTOP IGBT3 | — |
| Product Type | — | IGBT Single Transistor |
| Technology | — | TRENCHSTOP 5 (H5 high-speed family) |
| Collector-Emitter Voltage (VCE) | — | 650 V |
| Continuous Collector Current (IC, TC=25C) | — | 80 A |
| Continuous Collector Current (IC, TC=100C) | — | 50 A |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: ICM value] |
| Maximum Power Dissipation (Ptot) | — | 305 W |
| Напряжение насыщения коллектор-эмиттер (Vce(sat)) | — | 1.65 V at IC = 50 A |
| Gate-Emitter Voltage (VGE) max | — | 20 V (typical rating) |
| Gate Threshold Voltage (VGE(th)) | — | [DATA_NEEDED: VGE(th) value] |
| Built-in Diode | — | Yes, anti-parallel co-packaged diode |
| Operating Junction Temperature (Tj) | — | -40 C to +175 C (typical IGBT max) |
| Корпус | — | TO-247 (PG-TO247-3), 3 pins |
| Packing | — | Tube (240 pcs/tube per Infineon product page) |
| Статус жизненного цикла | — | Active (per Infineon product page) |