IMLT40R011M2HXTMA1 vs ISZ056N03LF2SATMA1 Comparaison
Comparaison détaillée côte à côte de IMLT40R011M2HXTMA1 par Infineon et ISZ056N03LF2SATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IMLT40R011M2HXTMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $12,80 | $0,49 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC MOSFET 400V G2 | — |
| Type de transistor | N-Channel SiC MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 400 V | 30 V |
| Continuous Drain Current (ID, Tc) | 144 A | — |
| Power Dissipation (PD, Tc) | 429 W | — |
| On-State Resistance (RDS(on)) | 11 mΩ (typ) | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V (benchmark) | 2.35 V (typ) |
| Recommended Gate Drive Voltage | 0 V to 18 V | — |
| Technology | Silicon Carbide (SiC) Gen-2 | — |
| Body Diode | Commutation-robust fast body diode, low Qrr | — |
| Avalanche Rating | 100% avalanche tested | — |
| Boîtier | PG-HDSOP-16-8 (surface mount, top-side cooled) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Interconnection Technology | XT (best-in-class thermal performance) | — |
| Operating Mode | Enhancement mode | — |
| Target Topologies | 2- and 3-level hard- and soft-switching | — |
| Target Applications | AI server PSU, SMPS, motor drives | — |
| Statut RoHS | Compliant | Compliant |
| Series | — | StrongIRFET 2 |
| Continuous Drain Current (ID) at Ta | — | 16 A |
| Continuous Drain Current (ID) at Tc | — | 72 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| On-Resistance (RDS(on)) max at VGS=10V | — | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 52 W |
| Plage de température de fonctionnement | — | -55 C to +175 C |