IMLT40R011M2HXTMA1 vs ISZ056N03LF2SATMA1 Comparison
Detailed side-by-side comparison of IMLT40R011M2HXTMA1 by Infineon and ISZ056N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IMLT40R011M2HXTMA1 - 400V 11mΞ© SiC MOSFET CoolSiC G2 | Infineon
IMLT40R011M2HXTMA1 β ActiveInfineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | IMLT40R011M2HXTMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $12.80 | $0.49 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC MOSFET 400V G2 | β |
| Transistor Type | N-Channel SiC MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 400 V | 30 V |
| Continuous Drain Current (ID, Tc) | 144 A | β |
| Power Dissipation (PD, Tc) | 429 W | β |
| On-State Resistance (RDS(on)) | 11 mΞ© (typ) | β |
| Gate Threshold Voltage (VGS(th)) | 4.5 V (benchmark) | 2.35 V (typ) |
| Recommended Gate Drive Voltage | 0 V to 18 V | β |
| Technology | Silicon Carbide (SiC) Gen-2 | β |
| Body Diode | Commutation-robust fast body diode, low Qrr | β |
| Avalanche Rating | 100% avalanche tested | β |
| Package | PG-HDSOP-16-8 (surface mount, top-side cooled) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Interconnection Technology | XT (best-in-class thermal performance) | β |
| Operating Mode | Enhancement mode | β |
| Target Topologies | 2- and 3-level hard- and soft-switching | β |
| Target Applications | AI server PSU, SMPS, motor drives | β |
| RoHS Status | Compliant | Compliant |
| Series | β | StrongIRFET 2 |
| Continuous Drain Current (ID) at Ta | β | 16 A |
| Continuous Drain Current (ID) at Tc | β | 72 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: gate-source voltage max] |
| On-Resistance (RDS(on)) max at VGS=10V | β | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 52 W |
| Operating Temperature Range | β | -55 C to +175 C |