IPD053N06NATMA1 - 60V 45A N-Ch OptiMOS 5 MOSFET | Infineon
Référence : IPD053N06NATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.95 | $0,95 |
| 10 | $0.85 | $8,50 |
| 100 | $0.74 | $74,00 |
| 500 | $0.66 | $330,00 |
| 1 000 | $0.59 | $590,00 |
| 2 500 | $0.52 | $1 300,00 |
IPD053N06NATMA1 Présentation
An N-channel power MOSFET is a voltage-controlled majority-carrier device used for fast switching and power conversion. It sits within the broader hierarchy: power MOSFET -> discrete semiconductor -> power management component. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET technology, balancing low conduction loss, low gate charge, and rugged avalanche capability for high-efficiency, high-frequency converter designs.
Key differentiating features include a 60 V VDS rating suitable for 48 V bus and telecom rails, a +/-20 V gate-source voltage rating (VGS) for robust gate drive margin, and a low RDS(on) that minimizes conduction loss in the synchronous rectifier position. The technology combines a tightly controlled cell pitch with an optimized body diode for hard-commutated topologies.
Architecturally, OptiMOS 5 60V devices use a charge-balanced super-junction trench structure that achieves the lowest figure-of-merit in the 60 V class. Compared to older OptiMOS 2/3 generations, the part achieves roughly 30-40% lower RDS(on) at equivalent die size and substantially lower Qg for faster switching edges and reduced driver loss.
Typical applications include synchronous rectification in server, desktop, and tablet-charger SMPS, solar micro-inverters, fast-switching DC-DC converters, motor drive low-side switches, and hot-swap / e-fuse circuits where the 60 V rating provides ample margin on 48 V rails.
When designing with this part, ensure the gate driver provides >10 V VGS for full enhancement and that PCB copper area under the DPAK tab is sufficient to keep Tj below the 175 C maximum. Use a gate-source resistor (typically 10-100 ohm) to dampen ringing from package and PCB parasitics.
This page synthesizes distributor pricing from Mouser and DigiKey, drop-in DPAK alternatives, and practical design notes that go beyond what is in the bare datasheet.
Alternatives de remplacement direct pour IPD053N06NATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IPD053N06NATMA1 (même facteur de forme et même empreinte) — différant par Package, RoHS Status, Drain-Source Voltage (VDS), Operating Junction Temperature, Automotive Qualification.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IPD025N06NATMA1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IPD50N06S409ATMA2
✅ Remplacement direct✓ En stock
$0.49 / unité
Voir la fiche technique →IPC100N04S51R7ATMA1
✅ Remplacement direct✓ En stock
$0.82 / unité
Voir la fiche technique →IAUC60N04S6L030HATMA1
✅ Remplacement direct✓ En stock
$0.94 / unité
Voir la fiche technique →BSC019N04LSGATMA1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IPD053N06NATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Product Series | OptiMOS 5 60V |
| Transistor Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 60 V |
| Gate-Source Voltage (VGS) | +/- 20 V |
| Continuous Drain Current (ID, Tc) | 45 A |
| Continuous Drain Current (ID, Ta) | 18 A |
| On-State Resistance (RDS(on), max) | 5.3 mOhm @ VGS=10V |
| Power Dissipation (Tc) | 83 W |
| Power Dissipation (Ta) | 3 W |
| Boîtier | PG-TO252-3 (DPAK-2), Surface Mount |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
| Technology | OptiMOS 5 trench MOSFET |
Configuration des broches de IPD053N06NATMA1
| Broche 1 | Gate — MOSFET gate drive input |
| Broche 2 | Drain — MOSFET drain (electrically connected to metal tab) |
| Broche 3 | Source — MOSFET source |
Zone de fonctionnement sûr (SOA) - DC
Applications typiques
IPD053N06NATMA1 convient pour 7 applications: 48V Synchronous Rectification in Server SMPS, Solar Micro-Inverter DC-DC Stage, High-Frequency Isolated DC-DC Converters, Motor Drive Low-Side Switch, Hot-Swap / E-Fuse Circuits, USB-PD and Fast-Charger Power Stages, Industrial 24V Braking and Solenoid Drivers.
48V Synchronous Rectification in Server SMPS
The IPD053N06NATMA1 fits 48 V server and telecom SMPS synchronous rectifier positions because its 60 V VDS rating provides ample headroom above the nominal 48 V bus plus transient spikes, while its 5.3 mOhm max RDS(on) keeps conduction loss manageable at the typical 20-30 A secondary-side current. Used as the low-side FET in a half-bridge or full-bridge LLC/phase-shift converter, it complements a controller such as the Infineon XDPP1148100BXUMA1 digital PSU controller. The OptiMOS 5 Figure-of-Merit (RDS(on) x Qg) supports switching frequencies of 100-300 kHz, allowing compact magnetics in 80 PLUS Titanium-class server power supplies where every 0.5% efficiency gain matters for data-center operating cost.
Recommandé
Solar Micro-Inverter DC-DC Stage
The IPD053N06NATMA1 is well suited for solar micro-inverter boost and synchronous rectification stages handling the typical 36-42 V PV panel voltage with switching transients. Its 60 V VDS rating exceeds the panel Voc (open-circuit) including cold-weather margin, and its low Qg permits switching above 100 kHz to shrink the boost inductor and output filter. The 5.3 mOhm RDS(on) keeps full-load efficiency above 97% in sub-1 kW micro-inverters. Designers typically pair it with an Infineon EiceDRIVER gate driver such as the 2EDL5023U2DXTMA1 or 1EDN7136UXTSA1, and the PG-TO252-3 package's exposed tab enables direct PCB heatsinking without an external heatsink in most residential installations.
Recommandé
High-Frequency Isolated DC-DC Converters
In isolated bus converters and telecom DC-DC modules, the IPD053N06NATMA1 serves as a primary or secondary synchronous switch where its 60 V rating covers 36-48 V input buses and its OptiMOS 5 trench technology provides the speed needed for 200-500 kHz switching. The 5.3 mOhm RDS(on) limits conduction loss while the low Qg minimizes driver loss; together they enable >95% efficiency in quarter-brick and sixteenth-brick form factors. The PG-TO252-3 footprint is the industry-standard DPAK land pattern, allowing direct migration from legacy MOSFET designs to this part without PCB rework, which is critical when modernizing an installed base of power modules.
Recommandé
Motor Drive Low-Side Switch
IPD053N06NATMA1 works as a low-side switch in fractional-horsepower BLDC and stepper motor drives, particularly for 24-36 V battery-powered applications such as cordless tools, e-bikes, and small robotics. The 60 V VDS rating comfortably exceeds 36 V battery transients during regen braking, and the 45 A continuous ID rating supports inrush peaks. The 5.3 mOhm RDS(on) keeps the FET from limiting PWM duty-cycle accuracy at high currents. In 3-phase inverter legs, three IPD053N06NATMA1 (or complementary high-side P-MOSFETs) per phase enable compact 1-2 kW motor drives that fit inside tool housings.
Recommandé
Hot-Swap / E-Fuse Circuits
Hot-swap and electronic-fuse circuits on 48 V distribution rails benefit from the IPD053N06NATMA1's 60 V rating and 45 A current handling. Used as the main pass element with a gate-controlled soft-start profile, it absorbs inrush transients when plugging live boards into a backplane, and the 5.3 mOhm RDS(on) minimizes steady-state voltage drop. Its avalanche rating (a hallmark of OptiMOS 5) provides robust SOA margin during fault conditions. The DPAK footprint is compatible with most hot-swap reference designs and simplifies thermal layout because the drain tab also serves as the heatsink interface.
Recommandé
USB-PD and Fast-Charger Power Stages
In USB-PD 3.1 and laptop fast-charger power stages operating from 19-28 V outputs, the IPD053N06NATMA1 functions as a synchronous rectifier on the secondary side of the flyback or active-clamp forward converter. Its 60 V VDS easily handles reflected voltage spikes from a 24 V output stage, and the low Qg enables QR/DCM operation at 65-130 kHz for compact 100-240 W GaN/Si hybrid chargers. Compared to older OptiMOS 2 parts, the 5.3 mOhm RDS(on) cuts secondary conduction loss by approximately 30%, contributing directly to the >93% efficiency required for DOE Level VI and EU CoC Tier 2 charger standards.
Recommandé
Industrial 24V Braking and Solenoid Drivers
The IPD053N06NATMA1 serves as a robust low-side switch for 24 V industrial solenoid valves, relay coils, and electromagnetic braking resistors. Its 60 V VDS gives 2.5x headroom over the 24 V nominal supply, easily absorbing flyback spikes from inductive loads without avalanche failure. The 45 A ID rating supports multiple parallel solenoids or large braking resistors in factory automation, and the 5.3 mOhm RDS(on) keeps dissipation low enough that the DPAK package can handle 5-10 A continuous duty without a heatsink. The -55 to +175 C Tj range covers factory-floor temperature extremes.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IPD053N06NATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IPD025N06NATMA1 | IPD50N06S409ATMA2 | IPC100N04S51R7ATMA1 | IAUC60N04S6L030HATMA1 | BSC019N04LSGATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 60 V | 40 V | 40 V | 40 V |
| On-State Resistance (RDS(on) max) | 5.3 mOhm | 2.5 mOhm (-53%) | ~5.0 mOhm | 1.7 mOhm (-68%) | 3.0 mOhm (-43%) | 1.9 mOhm (-64%) |
| Technology Generation | OptiMOS 5 | OptiMOS 5 - same | OptiMOS 2 | OptiMOS 5 | OptiMOS 6 | OptiMOS 5 |
| Gate-Source Voltage (VGS) | +/- 20 V | +/- 20 V - same | +/- 20 V - same | +/- 20 V - same | +/- 20 V - same | +/- 20 V - same |
| Automotive Grade (AEC-Q101) | No (industrial) | No | Yes | No | Yes | No |
Principaux différenciateurs
- OptiMOS 5 Figure-of-Merit balance (vs IPD50N06S409ATMA2 (OptiMOS 2))
- 60V VDS with automotive-grade drop-in options (vs IAUC60N04S6L030HATMA1 (40V OptiMOS 6))
- Same-footprint lower RDS(on) alternative exists (vs IPD025N06NATMA1 (OptiMOS 5, 2.5 mOhm))
Notes de conception
Estimated: At ID=20 A continuous and RDS(on)=5.3 mOhm, conduction loss is approximately P=I^2*R = 400 * 0.0053 = 2.12 W. With the DPAK package's typical theta_JA of 50 C/W on 1 oz copper 2-layer board (1 sq-inch tab copper), junction temperature rise above 25 C ambient is approximately 2.12 * 50 = 106 C, leaving margin to the 175 C Tj maximum. For 30 A continuous operation, increase tab copper to 2-3 sq inches or add a top-side thermal pad to drop theta_JA below 30 C/W. Failure to provide adequate copper will cause thermal runaway under sustained high current.
Layout recommendations for the PG-TO252-3 (DPAK): (1) Place the drain tab pad with at least 1 sq inch of 2 oz copper for thermal spreading; (2) minimize source-inductance loop by placing gate-drive return (source) plane directly under the package; (3) keep the gate trace short and use a 10-100 ohm gate-source resistor to dampen parasitic-oscillation ringing; (4) via-fence the drain tab perimeter with 0.3 mm thermal vias on 1 mm pitch to inner-layer copper pours. Poor layout is the leading cause of MOSFET EMI/ringing failures in OptiMOS designs.
Common pitfalls with IPD053N06NATMA1: (1) Exceeding the +/-20 V VGS rating during transient ringing - add a 10 kohm gate-source pull-down and use a gate-driver with tight UVLO; (2) Operating above 60 V VDS during turn-off spikes - always verify worst-case spike under full load and lowest bus voltage; (3) Driving the gate below 8 V causes partial enhancement and excessive conduction loss - check driver pull-up voltage under load. For synchronous rectifier positions, the body-diode reverse-recovery behavior must be considered; OptiMOS 5 has improved body-diode dv/dt capability but a dead-time of 50-100 ns is still recommended.
Source-inductance optimization: In DPAK synchronous rectifier applications, source inductance causes VGS bounce that can momentarily turn off the FET during switching transitions. To minimize this, use a Kelvin-source connection where the gate-driver return is tied to a dedicated source-sense pin rather than the main source bond-wire. Since the standard PG-TO252-3 has only 3 pins (no Kelvin source), place a via-stitching array under the source pad and route the gate return through this stitching plane to minimize Ls.
Informations de conformité
RoHS and REACH compliant per Infineon product page. Lead-free (Pb-free) reflow profile compatible. Not AEC-Q100/AEC-Q101 qualified - choose IAUC60N04S6L030HATMA1 for automotive designs. Halogen-free per Infineon OptiMOS 5 family datasheet.
