IPD70R1K4P7SAUMA1 vs IPD60R145CFD7ATMA1 Comparaison
Comparaison détaillée côte à côte de IPD70R1K4P7SAUMA1 par Infineon et IPD60R145CFD7ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IPD70R1K4P7SAUMA1 | IPD60R145CFD7ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,52 | $1,05 |
| Manufacturer | Infineon Technologies | — |
| Part Family | CoolMOS P7 (700V Superjunction) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 700 V | — |
| Continuous Drain Current (ID) at Tc=25C | 4 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max at VGS=10V, ID | 1.4 ohm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Power Dissipation (Ptot) at Tc=25C | 23 W | — |
| Température de jonction en fonctionnement | -55C to +150C | — |
| Boîtier | PG-TO252-3 (DPAK) | TO-252AA (DPAK) surface mount |
| Type de montage | Surface Mount | Surface Mount (DPAK, 3-pin + tab) |
| Nombre de broches | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| Technology | Superjunction (CoolMOS P7) | CoolMOS CFD7 (superjunction) |
| Avalanche Energy Rated | Yes (100% avalanche tested) | — |
| ESD Protection | Integrated (per datasheet) | — |
| Statut RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 600 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 16 A (T<sub>C</sub> = 25C) |
| On-Resistance R<sub>DS(on)</sub> max | — | 145 mOhm |
| Power Dissipation (P<sub>D</sub>) | — | 83 W (T<sub>C</sub> = 25C) |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | [DATA_NEEDED: Vth typical/min/max] |
| Body Diode | — | Integrated fast body diode (low Q<sub>rr</sub>) |
| Température de fonctionnement | — | -55C to +150C (junction) |
| Series | — | CoolMOS CFD7 |
| Niveau MSL | — | [DATA_NEEDED: MSL rating] |
| Target Application | — | ZVS / LLC resonant converters, soft switching |