IPD70R1K4P7SAUMA1 vs IPD60R145CFD7ATMA1 Comparação
Comparação detalhada lado a lado de IPD70R1K4P7SAUMA1 por Infineon e IPD60R145CFD7ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IPD70R1K4P7SAUMA1 | IPD60R145CFD7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,52 | $1,05 |
| Manufacturer | Infineon Technologies | — |
| Part Family | CoolMOS P7 (700V Superjunction) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 700 V | — |
| Continuous Drain Current (ID) at Tc=25C | 4 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max at VGS=10V, ID | 1.4 ohm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Power Dissipation (Ptot) at Tc=25C | 23 W | — |
| Temperatura de junção de operação | -55C to +150C | — |
| Encapsulamento | PG-TO252-3 (DPAK) | TO-252AA (DPAK) surface mount |
| Tipo de montagem | Surface Mount | Surface Mount (DPAK, 3-pin + tab) |
| Contagem de pinos | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| Technology | Superjunction (CoolMOS P7) | CoolMOS CFD7 (superjunction) |
| Avalanche Energy Rated | Yes (100% avalanche tested) | — |
| ESD Protection | Integrated (per datasheet) | — |
| Status RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 600 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 16 A (T<sub>C</sub> = 25C) |
| On-Resistance R<sub>DS(on)</sub> max | — | 145 mOhm |
| Power Dissipation (P<sub>D</sub>) | — | 83 W (T<sub>C</sub> = 25C) |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | [DATA_NEEDED: Vth typical/min/max] |
| Body Diode | — | Integrated fast body diode (low Q<sub>rr</sub>) |
| Temperatura de operação | — | -55C to +150C (junction) |
| Series | — | CoolMOS CFD7 |
| Nível MSL | — | [DATA_NEEDED: MSL rating] |
| Target Application | — | ZVS / LLC resonant converters, soft switching |