IPD70R1K4P7SAUMA1 vs IPD60R145CFD7ATMA1 비교

다음의 상세 나란히 비교: IPD70R1K4P7SAUMA1 제조: Infineon 및 IPD60R145CFD7ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IPD70R1K4P7SAUMA1 IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 ✓ 활성

사양 비교

파라미터 IPD70R1K4P7SAUMA1 IPD60R145CFD7ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.52 $1.05
Manufacturer Infineon Technologies —
Part Family CoolMOS P7 (700V Superjunction) —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 700 V —
Continuous Drain Current (ID) at Tc=25C 4 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max at VGS=10V, ID 1.4 ohm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Power Dissipation (Ptot) at Tc=25C 23 W —
동작 접합 온도 -55C to +150C —
패키지 PG-TO252-3 (DPAK) TO-252AA (DPAK) surface mount
실장 유형 Surface Mount Surface Mount (DPAK, 3-pin + tab)
핀 수 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
Technology Superjunction (CoolMOS P7) CoolMOS CFD7 (superjunction)
Avalanche Energy Rated Yes (100% avalanche tested) —
ESD Protection Integrated (per datasheet) —
RoHS 상태 Compliant Compliant
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>) — 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max — 145 mOhm
Power Dissipation (P<sub>D</sub>) — 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> — [DATA_NEEDED: Vth typical/min/max]
Body Diode — Integrated fast body diode (low Q<sub>rr</sub>)
동작 온도 — -55C to +150C (junction)
Series — CoolMOS CFD7
MSL 레벨 — [DATA_NEEDED: MSL rating]
Target Application — ZVS / LLC resonant converters, soft switching

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