IPG20N10S4L35AATMA1 vs IPB35N10S3L26ATMA1 Comparaison
Comparaison détaillée côte à côte de IPG20N10S4L35AATMA1 par Infineon et IPB35N10S3L26ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPG20N10S4L35AATMA1 | IPB35N10S3L26ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,98 | $1,15 |
| FET Type | Dual N-Channel (2 independent N-MOSFETs) | — |
| Technology | OptiMOS™ trench MOSFET, logic-level | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ TC=25°C | 20 A (per channel) | — |
| RDS(on) Max @ VGS=10 V, ID=17 A | 35 mΩ | — |
| Gate Threshold (VGS(th)) | Logic-level (typ. 1.7 V, fully enhanced at 4.5 V) | — |
| Power Dissipation (PD) @ TC=25°C | 43 W | — |
| Plage de température de fonctionnement | -55°C to +175°C (TJ) | — |
| Boîtier | PG-TDSON-8-10 (TDSON EP, wettable flank) | — |
| Type de montage | Surface Mount | Surface Mount |
| Avalanche Rating | 100% avalanche tested | — |
| AEC-Q101 Qualification | Yes (automotive grade) | [DATA_NEEDED: AEC-Q101 qualification status] |
| RoHS Compliance | Yes (Green Product) | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Drain Connection | Exposed pad (EP) tied to drain | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-T |
| Channel Type | — | N-Channel |
| Maximum Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC | — | 35 A |
| Power Dissipation (PD) at TC | — | 71 W |
| Package Type | — | PG-TO263-3 (D2PAK-2) |
| Nombre de broches | — | 3 (Gate, Drain, Source) |
| Channel Mode | — | Enhancement |
| RDS(on) (typical per Infineon product page) | — | 26.3 mΩ |
| Typical Gate Charge Qg @ Vgs | — | 80 nC |
| Maximum Drain-Source Resistance Rds | — | 1.7 mΩ (per RS Components listing) |
| Minimum Operating Temperature | — | -55 C |
| Maximum Power Dissipation Pd | — | 81 W (per RS Components listing) |
| Statut RoHS | — | [DATA_NEEDED: RoHS status] |