IPG20N10S4L35AATMA1 vs IPB35N10S3L26ATMA1 Comparison
Detailed side-by-side comparison of IPG20N10S4L35AATMA1 by Infineon and IPB35N10S3L26ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPG20N10S4L35AATMA1
IPG20N10S4L35AATMA1 - 100V Dual N-Ch 20A MOSFET | Infineon
IPG20N10S4L35AATMA1 β ActiveInfineon
IPB35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPB35N10S3L26ATMA1 β ActiveSpecification Comparison
| Parameter | IPG20N10S4L35AATMA1 | IPB35N10S3L26ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $1.15 |
| FET Type | Dual N-Channel (2 independent N-MOSFETs) | β |
| Technology | OptiMOSβ’ trench MOSFET, logic-level | β |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) @ TC=25Β°C | 20 A (per channel) | β |
| RDS(on) Max @ VGS=10 V, ID=17 A | 35 mΞ© | β |
| Gate Threshold (VGS(th)) | Logic-level (typ. 1.7 V, fully enhanced at 4.5 V) | β |
| Power Dissipation (PD) @ TC=25Β°C | 43 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ) | β |
| Package | PG-TDSON-8-10 (TDSON EP, wettable flank) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Rating | 100% avalanche tested | β |
| AEC-Q101 Qualification | Yes (automotive grade) | [DATA_NEEDED: AEC-Q101 qualification status] |
| RoHS Compliance | Yes (Green Product) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Drain Connection | Exposed pad (EP) tied to drain | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS-T |
| Channel Type | β | N-Channel |
| Maximum Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC | β | 35 A |
| Power Dissipation (PD) at TC | β | 71 W |
| Package Type | β | PG-TO263-3 (D2PAK-2) |
| Pin Count | β | 3 (Gate, Drain, Source) |
| Channel Mode | β | Enhancement |
| RDS(on) (typical per Infineon product page) | β | 26.3 mΞ© |
| Typical Gate Charge Qg @ Vgs | β | 80 nC |
| Maximum Drain-Source Resistance Rds | β | 1.7 mΞ© (per RS Components listing) |
| Minimum Operating Temperature | β | -55 C |
| Maximum Power Dissipation Pd | β | 81 W (per RS Components listing) |
| RoHS Status | β | [DATA_NEEDED: RoHS status] |