IPG20N10S4L35AATMA1 vs IPB35N10S3L26ATMA1 对比
详细并排对比 IPG20N10S4L35AATMA1 出自 Infineon 和 IPB35N10S3L26ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPG20N10S4L35AATMA1 | IPB35N10S3L26ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.98 | $1.15 |
| FET Type | Dual N-Channel (2 independent N-MOSFETs) | — |
| Technology | OptiMOS™ trench MOSFET, logic-level | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ TC=25°C | 20 A (per channel) | — |
| RDS(on) Max @ VGS=10 V, ID=17 A | 35 mΩ | — |
| Gate Threshold (VGS(th)) | Logic-level (typ. 1.7 V, fully enhanced at 4.5 V) | — |
| Power Dissipation (PD) @ TC=25°C | 43 W | — |
| 工作温度范围 | -55°C to +175°C (TJ) | — |
| 封装 | PG-TDSON-8-10 (TDSON EP, wettable flank) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Avalanche Rating | 100% avalanche tested | — |
| AEC-Q101 Qualification | Yes (automotive grade) | [DATA_NEEDED: AEC-Q101 qualification status] |
| RoHS Compliance | Yes (Green Product) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| Drain Connection | Exposed pad (EP) tied to drain | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-T |
| Channel Type | — | N-Channel |
| Maximum Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC | — | 35 A |
| Power Dissipation (PD) at TC | — | 71 W |
| Package Type | — | PG-TO263-3 (D2PAK-2) |
| 引脚数量 | — | 3 (Gate, Drain, Source) |
| Channel Mode | — | Enhancement |
| RDS(on) (typical per Infineon product page) | — | 26.3 mΩ |
| Typical Gate Charge Qg @ Vgs | — | 80 nC |
| Maximum Drain-Source Resistance Rds | — | 1.7 mΩ (per RS Components listing) |
| Minimum Operating Temperature | — | -55 C |
| Maximum Power Dissipation Pd | — | 81 W (per RS Components listing) |
| RoHS 状态 | — | [DATA_NEEDED: RoHS status] |