IPL60R105P7AUMA1 vs IGT65R025D2ATMA1 Comparaison
Comparaison détaillée côte à côte de IPL60R105P7AUMA1 par Infineon et IGT65R025D2ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ ActifComparaison des spécifications
| Paramètre | IPL60R105P7AUMA1 | IGT65R025D2ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,82 | $8,55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-Channel Power MOSFET | GaN-on-Si, 200 mm wafer, wide-bandgap |
| Drain-Source Voltage (VDS) | 600 V | — |
| On-Resistance (RDS(on)) max | 105 mΩ | — |
| Continuous Drain Current (ID) at Tc | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Ptot) at Tc | 137 W | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.5 V | — |
| Gate Charge (Qg) typ | 45 nC | — |
| Plage de température de fonctionnement | -55C to +150C | -55C to +150C (junction, typical) |
| Boîtier | PG-VSON-4 (4-pin SMD with exposed pad) | PG-HSOF-8 (source-down, bottom-cooled) |
| Type de montage | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Statut RoHS | Compliant | Compliant |
| Sans halogène | Yes | — |
| Lead-Free | Yes | — |
| Product Family | — | CoolGaN Gen2 (G5) |
| Type de transistor | — | N-Channel GaN HEMT, enhancement-mode |
| Drain-Source Voltage (Vdss) | — | 650 V |
| Continuous Drain Current (Id, Tc) | — | 70 A |
| Power Dissipation (Pd, Tc) | — | 236 W |
| On-State Resistance (Rds(on)) | — | 25 mΩ (typical, per MPN suffix) |
| Gate Threshold (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Output Charge (Qoss) | — | [DATA_NEEDED: Qoss typical value] |
| Reverse Recovery Charge (Qrr) | — | Near-zero (GaN characteristic) |