IPL60R105P7AUMA1 vs IGT65R025D2ATMA1 Comparison
Detailed side-by-side comparison of IPL60R105P7AUMA1 by Infineon and IGT65R025D2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R105P7AUMA1
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΞ© N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 β ActiveInfineon
IGT65R025D2ATMA1
IGT65R025D2ATMA1 - 650V 70A GaN FET, PG-HSOF-8 | Infineon
IGT65R025D2ATMA1 β ActiveSpecification Comparison
| Parameter | IPL60R105P7AUMA1 | IGT65R025D2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $8.55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | β |
| Technology | Superjunction (SJ) N-Channel Power MOSFET | GaN-on-Si, 200 mm wafer, wide-bandgap |
| Drain-Source Voltage (VDS) | 600 V | β |
| On-Resistance (RDS(on)) max | 105 mΞ© | β |
| Continuous Drain Current (ID) at Tc | 33 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (Ptot) at Tc | 137 W | β |
| Gate Threshold Voltage (VGS(th)) typ | 3.5 V | β |
| Gate Charge (Qg) typ | 45 nC | β |
| Operating Temperature Range | -55C to +150C | -55C to +150C (junction, typical) |
| Package | PG-VSON-4 (4-pin SMD with exposed pad) | PG-HSOF-8 (source-down, bottom-cooled) |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel | β |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| Lead-Free | Yes | β |
| Product Family | β | CoolGaN Gen2 (G5) |
| Transistor Type | β | N-Channel GaN HEMT, enhancement-mode |
| Drain-Source Voltage (Vdss) | β | 650 V |
| Continuous Drain Current (Id, Tc) | β | 70 A |
| Power Dissipation (Pd, Tc) | β | 236 W |
| On-State Resistance (Rds(on)) | β | 25 mΞ© (typical, per MPN suffix) |
| Gate Threshold (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) typical value] |
| Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical value] |
| Output Charge (Qoss) | β | [DATA_NEEDED: Qoss typical value] |
| Reverse Recovery Charge (Qrr) | β | Near-zero (GaN characteristic) |