IPL60R105P7AUMA1 vs IGT65R025D2ATMA1 对比
详细并排对比 IPL60R105P7AUMA1 出自 Infineon 和 IGT65R025D2ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ 量产中规格对比
| 参数 | IPL60R105P7AUMA1 | IGT65R025D2ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.82 | $8.55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-Channel Power MOSFET | GaN-on-Si, 200 mm wafer, wide-bandgap |
| Drain-Source Voltage (VDS) | 600 V | — |
| On-Resistance (RDS(on)) max | 105 mΩ | — |
| Continuous Drain Current (ID) at Tc | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Ptot) at Tc | 137 W | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.5 V | — |
| Gate Charge (Qg) typ | 45 nC | — |
| 工作温度范围 | -55C to +150C | -55C to +150C (junction, typical) |
| 封装 | PG-VSON-4 (4-pin SMD with exposed pad) | PG-HSOF-8 (source-down, bottom-cooled) |
| 安装类型 | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | Compliant | Compliant |
| 无卤 | Yes | — |
| Lead-Free | Yes | — |
| Product Family | — | CoolGaN Gen2 (G5) |
| 晶体管类型 | — | N-Channel GaN HEMT, enhancement-mode |
| Drain-Source Voltage (Vdss) | — | 650 V |
| Continuous Drain Current (Id, Tc) | — | 70 A |
| Power Dissipation (Pd, Tc) | — | 236 W |
| On-State Resistance (Rds(on)) | — | 25 mΩ (typical, per MPN suffix) |
| Gate Threshold (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Output Charge (Qoss) | — | [DATA_NEEDED: Qoss typical value] |
| Reverse Recovery Charge (Qrr) | — | Near-zero (GaN characteristic) |