IPL65R070C7AUMA1 vs IPL60R060CFD7AUMA1 Comparaison
Comparaison détaillée côte à côte de IPL65R070C7AUMA1 par Infineon et IPL60R060CFD7AUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPL65R070C7AUMA1 | IPL60R060CFD7AUMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,68 | $4,03 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | CoolMOS™ CFD7 |
| Technology | Superjunction N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID) at TC=25°C | 28 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 70 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) at TC=25°C | 169 W | — |
| Avalanche Energy (EAS) | 171 mJ | — |
| Température de jonction en fonctionnement | -55°C to +150°C | — |
| Boîtier | PG-VSON-4 (surface mount) | PG-VSON-4-1 (Surface Mount) |
| Type de montage | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | — |
| Channel Type | N-Channel | — |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL Level] |
| Type de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 600 V |
| Continuous Drain Current (I_D, Tc) | — | 40 A |
| Power Dissipation (P_D, Tc) | — | 219 W |
| R_DS(on) (max) at V_GS = 10 V | — | 60 mΩ |
| R_DS(on) (typ, datasheet) | — | 48 mΩ |
| Gate Charge (Q_G, typ) at V_GS = 10 V | — | 79 nC |
| Input Capacitance (C_iss) | — | 3193 pF |
| Output Capacitance (C_oss) | — | 62 pF |
| Gate-Source Voltage (V_GS) | — | ±20 V (max) |
| Gate Threshold Voltage (V_GS(th), typ) | — | 4.5 V |
| Plage de température de fonctionnement | — | -40 °C to +150 °C |