IPL65R070C7AUMA1 vs IPL60R060CFD7AUMA1 Сравнение
Подробное сравнение бок о бок IPL65R070C7AUMA1 от Infineon и IPL60R060CFD7AUMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPL60R060CFD7AUMA1 - 600V CoolMOS CFD7 MOSFET, 60mΩ | Infineon
IPL60R060CFD7AUMA1 ✓ АктивенСравнение характеристик
| Параметр | IPL65R070C7AUMA1 | IPL60R060CFD7AUMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,68 | $4,03 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | CoolMOS™ CFD7 |
| Technology | Superjunction N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID) at TC=25°C | 28 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 70 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) at TC=25°C | 169 W | — |
| Avalanche Energy (EAS) | 171 mJ | — |
| Рабочая температура перехода | -55°C to +150°C | — |
| Корпус | PG-VSON-4 (surface mount) | PG-VSON-4-1 (Surface Mount) |
| Тип монтажа | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | — |
| Channel Type | N-Channel | — |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Уровень MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL Level] |
| Тип транзистора | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 600 V |
| Continuous Drain Current (I_D, Tc) | — | 40 A |
| Power Dissipation (P_D, Tc) | — | 219 W |
| R_DS(on) (max) at V_GS = 10 V | — | 60 mΩ |
| R_DS(on) (typ, datasheet) | — | 48 mΩ |
| Gate Charge (Q_G, typ) at V_GS = 10 V | — | 79 nC |
| Input Capacitance (C_iss) | — | 3193 pF |
| Output Capacitance (C_oss) | — | 62 pF |
| Gate-Source Voltage (V_GS) | — | ±20 V (max) |
| Gate Threshold Voltage (V_GS(th), typ) | — | 4.5 V |
| Диапазон рабочих температур | — | -40 °C to +150 °C |