IPL65R070C7AUMA1 vs IPL60R060CFD7AUMA1 Comparison
Detailed side-by-side comparison of IPL65R070C7AUMA1 by Infineon and IPL60R060CFD7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPL65R070C7AUMA1 | IPL60R060CFD7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | CoolMOS™ CFD7 |
| Technology | Superjunction N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID) at TC=25°C | 28 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 70 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) at TC=25°C | 169 W | — |
| Avalanche Energy (EAS) | 171 mJ | — |
| Operating Junction Temperature | -55°C to +150°C | — |
| Package | PG-VSON-4 (surface mount) | PG-VSON-4-1 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | — |
| Channel Type | N-Channel | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL Level] |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 600 V |
| Continuous Drain Current (I_D, Tc) | — | 40 A |
| Power Dissipation (P_D, Tc) | — | 219 W |
| R_DS(on) (max) at V_GS = 10 V | — | 60 mΩ |
| R_DS(on) (typ, datasheet) | — | 48 mΩ |
| Gate Charge (Q_G, typ) at V_GS = 10 V | — | 79 nC |
| Input Capacitance (C_iss) | — | 3193 pF |
| Output Capacitance (C_oss) | — | 62 pF |
| Gate-Source Voltage (V_GS) | — | ±20 V (max) |
| Gate Threshold Voltage (V_GS(th), typ) | — | 4.5 V |
| Operating Temperature Range | — | -40 °C to +150 °C |