IPP100N12S305AKSA2 vs IPP320N20N3GXKSA1 Comparaison
Comparaison détaillée côte à côte de IPP100N12S305AKSA2 par Infineon et IPP320N20N3GXKSA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ ActifInfineon
IPP320N20N3GXKSA1 - 200V 34A OptiMOS 3 N-Channel MOSFET | Infineon
IPP320N20N3GXKSA1 ✓ ActifComparaison des spécifications
| Paramètre | IPP100N12S305AKSA2 | IPP320N20N3GXKSA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,78 | $1,36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 3 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 120 V | 200 V |
| Continuous Drain Current (ID, TC=25C) | 100 A | — |
| Continuous Drain Current (ID, TC=100C) | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissipation (PD, TC=25C) | 300 W | — |
| On-State Resistance R_DS(on) max @ VGS=10V | [DATA_NEEDED: R_DS(on) max] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | 4 V |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: total gate charge] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| Plage de température de fonctionnement | -55C to +175C (TJ) | -55°C to +175°C |
| Boîtier | PG-TO220-3-1 (Through Hole) | TO-220-3 (PG-TO220-3) through-hole |
| Type de montage | Through Hole | Through Hole |
| Nombre de broches | 3 (Gate, Drain, Source) | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | N/A (Through Hole) | Not applicable (through-hole) |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Technology | — | N-Channel Trench MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 34 A |
| On-State Resistance RDS(on) max at VGS=10V | — | 32 mΩ |
| Total Power Dissipation PD at TC=25°C | — | 136 W |
| Nombre de broches | — | 3 (3 + Tab) |
| Channel Type | — | N-Channel |
| Element Configuration | — | Single |
| Lead-Free | — | Yes |