IPP100N12S305AKSA2 vs IPP320N20N3GXKSA1 对比
详细并排对比 IPP100N12S305AKSA2 出自 Infineon 和 IPP320N20N3GXKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ 量产中
规格对比
| 参数 | IPP100N12S305AKSA2 | IPP320N20N3GXKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.78 | $1.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 3 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 120 V | 200 V |
| Continuous Drain Current (ID, TC=25C) | 100 A | — |
| Continuous Drain Current (ID, TC=100C) | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissipation (PD, TC=25C) | 300 W | — |
| On-State Resistance R_DS(on) max @ VGS=10V | [DATA_NEEDED: R_DS(on) max] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | 4 V |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: total gate charge] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| 工作温度范围 | -55C to +175C (TJ) | -55°C to +175°C |
| 封装 | PG-TO220-3-1 (Through Hole) | TO-220-3 (PG-TO220-3) through-hole |
| 安装类型 | Through Hole | Through Hole |
| 引脚数量 | 3 (Gate, Drain, Source) | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | N/A (Through Hole) | Not applicable (through-hole) |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Technology | — | N-Channel Trench MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 34 A |
| On-State Resistance RDS(on) max at VGS=10V | — | 32 mΩ |
| Total Power Dissipation PD at TC=25°C | — | 136 W |
| 引脚数 | — | 3 (3 + Tab) |
| Channel Type | — | N-Channel |
| Element Configuration | — | Single |
| Lead-Free | — | Yes |