IPP100N12S305AKSA2 vs IPP320N20N3GXKSA1 Сравнение
Подробное сравнение бок о бок IPP100N12S305AKSA2 от Infineon и IPP320N20N3GXKSA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ АктивенInfineon
IPP320N20N3GXKSA1 - 200V 34A OptiMOS 3 N-Channel MOSFET | Infineon
IPP320N20N3GXKSA1 ✓ АктивенСравнение характеристик
| Параметр | IPP100N12S305AKSA2 | IPP320N20N3GXKSA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $3,78 | $1,36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 3 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 120 V | 200 V |
| Continuous Drain Current (ID, TC=25C) | 100 A | — |
| Continuous Drain Current (ID, TC=100C) | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissipation (PD, TC=25C) | 300 W | — |
| On-State Resistance R_DS(on) max @ VGS=10V | [DATA_NEEDED: R_DS(on) max] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | 4 V |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: total gate charge] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| Диапазон рабочих температур | -55C to +175C (TJ) | -55°C to +175°C |
| Корпус | PG-TO220-3-1 (Through Hole) | TO-220-3 (PG-TO220-3) through-hole |
| Тип монтажа | Through Hole | Through Hole |
| Число выводов | 3 (Gate, Drain, Source) | — |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | N/A (Through Hole) | Not applicable (through-hole) |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Technology | — | N-Channel Trench MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 34 A |
| On-State Resistance RDS(on) max at VGS=10V | — | 32 mΩ |
| Total Power Dissipation PD at TC=25°C | — | 136 W |
| Количество выводов | — | 3 (3 + Tab) |
| Channel Type | — | N-Channel |
| Element Configuration | — | Single |
| Lead-Free | — | Yes |