IPP120N04S4-02 vs IRF3205STRLPBF Comparaison
Comparaison détaillée côte à côte de IPP120N04S4-02 par Infineon et IRF3205STRLPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPP120N04S4-02 | IRF3205STRLPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,72 | $1,02 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS-T2 | — |
| FET Type | N-Channel MOSFET, Enhancement Mode | — |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 degC) | 120 A | — |
| Pulsed Drain Current (I<sub>DM</sub>) | 480 A | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 1.9 mOhm (DigiKey listing); 1.8 mOhm (Infineon product page) | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: typical V_GS(th) and V_GS range] | — |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 degC) | 158 W | — |
| Température de jonction en fonctionnement | -55 degC to +175 degC | — |
| Package / Mounting Type | PG-TO220-3-1 (TO-220-3, through-hole) | — |
| AEC Qualification | AEC qualified (automotive) | — |
| MSL (Moisture Sensitivity Level) | MSL1, 260 degC peak reflow | — |
| Avalanche Rating | 100% avalanche tested | — |
| RoHS / Lead-Free | RoHS compliant (Green Product), lead-free | — |
| Nombre de broches | 3 (Gate, Drain, Source) | — |
| Single Pulse Avalanche Energy (E<sub>AS</sub>) | [DATA_NEEDED: E_AS] | — |
| Thermal Resistance Junction-to-Case (R<sub>thJC</sub>) | [DATA_NEEDED: R_thJC degC/W] | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 110 A |
| Pulsed Drain Current (Idm) | — | 390 A |
| Static Drain-Source On-Resistance (Rds(on)) | — | 8 mΩ max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 97.3 nC typical |
| Power Dissipation (Pd) @ Tc=25°C | — | 200 W |
| Plage de température de fonctionnement | — | -55 °C to +175 °C (Tj) |
| Boîtier | — | TO-263-3 (D2PAK) |
| Type de montage | — | Surface Mount |
| Lead-Free / RoHS Status | — | Lead-Free / RoHS Compliant (PBF suffix) |
| Technology | — | HEXFET (advanced process) |
| Packaging | — | Tape & Reel (STRL) |