IPP120N04S4-02 vs IRF3205STRLPBF Сравнение
Подробное сравнение бок о бок IPP120N04S4-02 от Infineon и IRF3205STRLPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IPP120N04S4-02 | IRF3205STRLPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,72 | $1,02 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS-T2 | — |
| FET Type | N-Channel MOSFET, Enhancement Mode | — |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 degC) | 120 A | — |
| Pulsed Drain Current (I<sub>DM</sub>) | 480 A | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 1.9 mOhm (DigiKey listing); 1.8 mOhm (Infineon product page) | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: typical V_GS(th) and V_GS range] | — |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 degC) | 158 W | — |
| Рабочая температура перехода | -55 degC to +175 degC | — |
| Package / Mounting Type | PG-TO220-3-1 (TO-220-3, through-hole) | — |
| AEC Qualification | AEC qualified (automotive) | — |
| MSL (Moisture Sensitivity Level) | MSL1, 260 degC peak reflow | — |
| Avalanche Rating | 100% avalanche tested | — |
| RoHS / Lead-Free | RoHS compliant (Green Product), lead-free | — |
| Число выводов | 3 (Gate, Drain, Source) | — |
| Single Pulse Avalanche Energy (E<sub>AS</sub>) | [DATA_NEEDED: E_AS] | — |
| Thermal Resistance Junction-to-Case (R<sub>thJC</sub>) | [DATA_NEEDED: R_thJC degC/W] | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 110 A |
| Pulsed Drain Current (Idm) | — | 390 A |
| Static Drain-Source On-Resistance (Rds(on)) | — | 8 mΩ max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 97.3 nC typical |
| Power Dissipation (Pd) @ Tc=25°C | — | 200 W |
| Диапазон рабочих температур | — | -55 °C to +175 °C (Tj) |
| Корпус | — | TO-263-3 (D2PAK) |
| Тип монтажа | — | Surface Mount |
| Lead-Free / RoHS Status | — | Lead-Free / RoHS Compliant (PBF suffix) |
| Technology | — | HEXFET (advanced process) |
| Packaging | — | Tape & Reel (STRL) |