IPT067N20NM6ATMA1 vs IQE020N04LM6CGATMA1 Comparaison
Comparaison détaillée côte à côte de IPT067N20NM6ATMA1 par Infineon et IQE020N04LM6CGATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPT067N20NM6ATMA1 | IQE020N04LM6CGATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $4,85 | $1,75 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | — |
| Type de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | — |
| Continuous Drain Current (ID) at TC=25C | 137 A | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| Type de montage | Surface Mount | Surface Mount |
| Boîtier | PG-HSOF-8-1 (8-pin + exposed tab) | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) |
| Plage de température de fonctionnement | -55C to +150C (junction) | -55°C to +150°C |
| Technology | Trench-gate OptiMOS 6 silicon | OptiMOS 6, TrenchFET-class |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| On-Resistance RDS(on) typ | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: total gate charge] | — |
| Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical value] | — |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Niveau MSL | [DATA_NEEDED: MSL moisture sensitivity level] | MSL1 (per JEDEC J-STD-020) |
| Configuration | Single N-channel | Single N-Channel, source-down |
| Series | — | OptiMOS 6 |
| Continuous Drain Current (ID) at TA=25°C | — | 25 A |
| Continuous Drain Current (ID) at TC=25°C | — | 166 A |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 107 W |
| On-State Resistance (RDS(on)) typical @ VGS=10V | — | 2.0 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: Qg value] |