IPT067N20NM6ATMA1 vs IQE020N04LM6CGATMA1 比較
詳細な並列比較: IPT067N20NM6ATMA1 メーカー: Infineon および IQE020N04LM6CGATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPT067N20NM6ATMA1 | IQE020N04LM6CGATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $4.85 | $1.75 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | — |
| トランジスタタイプ | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | — |
| Continuous Drain Current (ID) at TC=25C | 137 A | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| 実装タイプ | Surface Mount | Surface Mount |
| パッケージ | PG-HSOF-8-1 (8-pin + exposed tab) | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) |
| 動作温度範囲 | -55C to +150C (junction) | -55°C to +150°C |
| Technology | Trench-gate OptiMOS 6 silicon | OptiMOS 6, TrenchFET-class |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| On-Resistance RDS(on) typ | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: total gate charge] | — |
| Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical value] | — |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSLレベル | [DATA_NEEDED: MSL moisture sensitivity level] | MSL1 (per JEDEC J-STD-020) |
| Configuration | Single N-channel | Single N-Channel, source-down |
| Series | — | OptiMOS 6 |
| Continuous Drain Current (ID) at TA=25°C | — | 25 A |
| Continuous Drain Current (ID) at TC=25°C | — | 166 A |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 107 W |
| On-State Resistance (RDS(on)) typical @ VGS=10V | — | 2.0 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: Qg value] |