IPT067N20NM6ATMA1 vs IQE020N04LM6CGATMA1 Comparison
Detailed side-by-side comparison of IPT067N20NM6ATMA1 by Infineon and IQE020N04LM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT067N20NM6ATMA1 - 200V 137A OptiMOS 6 Power MOSFET | Infineon
IPT067N20NM6ATMA1 β ActiveInfineon
IQE020N04LM6CGATMA1 - 40V 2.0mΞ© OptiMOS 6 MOSFET | Infineon
IQE020N04LM6CGATMA1 β ActiveSpecification Comparison
| Parameter | IPT067N20NM6ATMA1 | IQE020N04LM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.85 | $1.75 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | β |
| Continuous Drain Current (ID) at TC=25C | 137 A | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| Power Dissipation (PD) at TC=25C | 300 W | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package | PG-HSOF-8-1 (8-pin + exposed tab) | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) |
| Operating Temperature Range | -55C to +150C (junction) | -55Β°C to +150Β°C |
| Technology | Trench-gate OptiMOS 6 silicon | OptiMOS 6, TrenchFET-class |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | β |
| On-Resistance RDS(on) typ | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Gate Charge (Qg) typ | [DATA_NEEDED: total gate charge] | β |
| Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical value] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL moisture sensitivity level] | MSL1 (per JEDEC J-STD-020) |
| Configuration | Single N-channel | Single N-Channel, source-down |
| Series | β | OptiMOS 6 |
| Continuous Drain Current (ID) at TA=25Β°C | β | 25 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 166 A |
| Power Dissipation (PD) at TA=25Β°C | β | 2.5 W |
| Power Dissipation (PD) at TC=25Β°C | β | 107 W |
| On-State Resistance (RDS(on)) typical @ VGS=10V | β | 2.0 mΞ© |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) typical | β | [DATA_NEEDED: Qg value] |