IQE008N03LM5ATMA1 vs IQE036N08NM6CGSCATMA1 Comparaison
Comparaison détaillée côte à côte de IQE008N03LM5ATMA1 par Infineon et IQE036N08NM6CGSCATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IQE008N03LM5ATMA1 | IQE036N08NM6CGSCATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,94 | $0,88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at TA=25°C | 27 A | — |
| Continuous Drain Current (ID) at TC=25°C | 253 A | — |
| On-Resistance RDS(on) Typical | 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (at 250 µA per LCSC snippet) | — |
| Power Dissipation at TA=25°C | 2.1 W | — |
| Power Dissipation at TC=25°C | 89 W | — |
| Boîtier | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down | — |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55°C to +150°C (typical MOSFET junction rating) | -55 C to +150 C (junction, per datasheet derating curves) |
| Gate-Source Voltage (VGS) Max | ±20 V (typical MOSFET rating) | — |
| Technology | OptiMOS 5, Source-Down | Trench MOSFET (OptiMOS 6) |
| Statut RoHS | Compliant (per LCSC listing) | Compliant |
| Niveau MSL | [DATA_NEEDED: MSL level] | — |
| Series | — | OptiMOS 6 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TA | — | 16.7 A |
| Continuous Drain Current (ID) at TC | — | 118 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 125 W |
| Boîtier / Format | — | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) |
| Configuration | — | Source Down, Center Gate, Dual-Side Cooling |
| Packing | — | Tape and Reel (suffix ATMA1) |
| Voltage Rating | — | 60 V to 100 V category (80 V nominal) |