IQE008N03LM5ATMA1 vs IQE036N08NM6CGSCATMA1 Comparison
Detailed side-by-side comparison of IQE008N03LM5ATMA1 by Infineon and IQE036N08NM6CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE008N03LM5ATMA1
IQE008N03LM5ATMA1 - 30V 0.85mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
IQE008N03LM5ATMA1 β ActiveInfineon
IQE036N08NM6CGSCATMA1
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE008N03LM5ATMA1 | IQE036N08NM6CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $0.88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 27 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 253 A | β |
| On-Resistance RDS(on) Typical | 0.85 mΞ© (at 20 A, VGS=10 V per LCSC datasheet snippet) | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (at 250 Β΅A per LCSC snippet) | β |
| Power Dissipation at TA=25Β°C | 2.1 W | β |
| Power Dissipation at TC=25Β°C | 89 W | β |
| Package | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +150Β°C (typical MOSFET junction rating) | -55 C to +150 C (junction, per datasheet derating curves) |
| Gate-Source Voltage (VGS) Max | Β±20 V (typical MOSFET rating) | β |
| Technology | OptiMOS 5, Source-Down | Trench MOSFET (OptiMOS 6) |
| RoHS Status | Compliant (per LCSC listing) | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Series | β | OptiMOS 6 |
| Part Status | β | Active |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) at TA | β | 16.7 A |
| Continuous Drain Current (ID) at TC | β | 118 A |
| Power Dissipation (PD) at TA | β | 2.5 W |
| Power Dissipation (PD) at TC | β | 125 W |
| Package / Case | β | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) |
| Configuration | β | Source Down, Center Gate, Dual-Side Cooling |
| Packing | β | Tape and Reel (suffix ATMA1) |
| Voltage Rating | β | 60 V to 100 V category (80 V nominal) |