IQE008N03LM5ATMA1 vs IQE036N08NM6CGSCATMA1 Comparación
Comparación detallada lado a lado de IQE008N03LM5ATMA1 por Infineon y IQE036N08NM6CGSCATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQE008N03LM5ATMA1 | IQE036N08NM6CGSCATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,94 | $0,88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at TA=25°C | 27 A | — |
| Continuous Drain Current (ID) at TC=25°C | 253 A | — |
| On-Resistance RDS(on) Typical | 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (at 250 µA per LCSC snippet) | — |
| Power Dissipation at TA=25°C | 2.1 W | — |
| Power Dissipation at TC=25°C | 89 W | — |
| Encapsulado | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55°C to +150°C (typical MOSFET junction rating) | -55 C to +150 C (junction, per datasheet derating curves) |
| Gate-Source Voltage (VGS) Max | ±20 V (typical MOSFET rating) | — |
| Technology | OptiMOS 5, Source-Down | Trench MOSFET (OptiMOS 6) |
| Estado RoHS | Compliant (per LCSC listing) | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL level] | — |
| Series | — | OptiMOS 6 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TA | — | 16.7 A |
| Continuous Drain Current (ID) at TC | — | 118 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 125 W |
| Encapsulado / Carcasa | — | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) |
| Configuration | — | Source Down, Center Gate, Dual-Side Cooling |
| Packing | — | Tape and Reel (suffix ATMA1) |
| Voltage Rating | — | 60 V to 100 V category (80 V nominal) |