IRF1010NPBF-VB vs IRF1010NPBF Comparaison
Comparaison détaillée côte à côte de IRF1010NPBF-VB par VBsemi Elec et IRF1010NPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRF1010NPBF-VB | IRF1010NPBF |
|---|---|---|
| Marque | VBsemi Elec | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,25 | $1,32 |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage VDSS | 55 V | — |
| Continuous Drain Current ID | 85 A (Tc) | — |
| Power Dissipation PD | 180 W (Tc) | — |
| On-Resistance RDS(on) | 0.014 Ohm (14 mOhm) | — |
| Total Gate Charge Qg | 80 nC | — |
| Gate-Source Voltage VGSS | +/-20 V | — |
| Operating Mode | Enhancement | — |
| Number of Channels | 1 | — |
| Boîtier | TO-220AB (Through Hole) | TO-220AB |
| Type de montage | Through Hole | Through Hole |
| Configuration | Single FET | Single FET, 1 element |
| Process Technology | Planar HEXFET, Advanced Process Technology | — |
| Recommended Switching Frequency | Below 100 kHz | Below 100 kHz |
| Market Qualification | Industrial | Industrial (JEDEC per manufacturer) |
| Statut RoHS | Compliant (Pb-free suffix) | Compliant (PbF = lead-free) |
| FET Type | — | N-Channel MOSFET |
| Technology | — | HEXFET planar |
| Drain-to-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) at Tc | — | 85 A |
| Drain-Source On-Resistance (Rds(on)) | — | 11 mOhm max at 10 V gate drive |
| Total Gate Charge (Qg) | — | 80 nC |
| Power Dissipation (Pd) | — | 180 W (Tc) |
| Polarity | — | N-Channel |
| Series | — | HEXFET |
| Température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Continuous Drain Current (Id) at Ta | — | [DATA_NEEDED: Id at 25C ambient] |