IRF1010NPBF-VB vs IRF1010NPBF 对比
详细并排对比 IRF1010NPBF-VB 出自 VBsemi Elec 和 IRF1010NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF1010NPBF-VB | IRF1010NPBF |
|---|---|---|
| 品牌 | VBsemi Elec | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.25 | $1.32 |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage VDSS | 55 V | — |
| Continuous Drain Current ID | 85 A (Tc) | — |
| Power Dissipation PD | 180 W (Tc) | — |
| On-Resistance RDS(on) | 0.014 Ohm (14 mOhm) | — |
| Total Gate Charge Qg | 80 nC | — |
| Gate-Source Voltage VGSS | +/-20 V | — |
| Operating Mode | Enhancement | — |
| Number of Channels | 1 | — |
| 封装 | TO-220AB (Through Hole) | TO-220AB |
| 安装类型 | Through Hole | Through Hole |
| Configuration | Single FET | Single FET, 1 element |
| Process Technology | Planar HEXFET, Advanced Process Technology | — |
| Recommended Switching Frequency | Below 100 kHz | Below 100 kHz |
| Market Qualification | Industrial | Industrial (JEDEC per manufacturer) |
| RoHS 状态 | Compliant (Pb-free suffix) | Compliant (PbF = lead-free) |
| FET Type | — | N-Channel MOSFET |
| Technology | — | HEXFET planar |
| Drain-to-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) at Tc | — | 85 A |
| Drain-Source On-Resistance (Rds(on)) | — | 11 mOhm max at 10 V gate drive |
| Total Gate Charge (Qg) | — | 80 nC |
| Power Dissipation (Pd) | — | 180 W (Tc) |
| Polarity | — | N-Channel |
| Series | — | HEXFET |
| 工作温度 | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Continuous Drain Current (Id) at Ta | — | [DATA_NEEDED: Id at 25C ambient] |