IRF1405PBF vs IRFP2907PBF Comparaison
Comparaison détaillée côte à côte de IRF1405PBF par Infineon et IRFP2907PBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRF1405PBF | IRFP2907PBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,42 | $2,45 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number Suffix | PbF (lead-free, RoHS compliant) | — |
| Type de transistor | N-Channel MOSFET | — |
| Technology | HEXFET (Stripe Planar cell structure) | HEXFET Stripe Planar DMOS (N-Channel) |
| Drain-Source Voltage (V_DS) | 55 V | — |
| Continuous Drain Current (I_D, Tc=25C) | 169 A | — |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current rating] | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 330 W | — |
| R_DS(on) Maximum | 5.3 mOhm @ V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th)) | 2.0 V to 4.0 V | — |
| Maximum Gate-Source Voltage (V_GS) | [DATA_NEEDED: maximum V_GS rating] | — |
| Operating Junction Temperature (T_J max) | 175 C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Boîtier | TO-220AB (through-hole) | — |
| Type de montage | Through Hole | — |
| Qualification | JEDEC qualified, optimized for switching below 100 kHz | — |
| Statut RoHS | PbF suffix indicates lead-free / RoHS compliant | — |
| Single Pulse Avalanche Energy (E_AS) | [DATA_NEEDED: avalanche energy rating] | — |
| Thermal Resistance Junction-to-Case (R_theta_JC) | [DATA_NEEDED: thermal resistance R_theta_JC] | — |
| Part Number | — | IRFP2907PBF |
| Drain-to-Source Voltage (V_DSS) | — | 75 V |
| Continuous Drain Current (I_D) at T_C = 25 C | — | 209 A |
| Static Drain-to-Source On-Resistance (R_DS(on)) | — | 4.5 mOhm at V_GS = 10 V |
| Power Dissipation (P_D) at T_C = 25 C | — | 470 W |
| Total Gate Charge (Q_g) | — | 410 nC |
| Maximum Junction Operating Temperature | — | +175 C |
| Package / Mounting Type | — | TO-247AC (Through Hole) |
| Nombre de broches | — | 3 (Gate, Drain, Source) |
| RoHS Compliance | — | Yes (Pb-free) |
| Avalanche Rated | — | Yes (repetitive avalanche rated) |
| Body Diode | — | Integral (no external anti-parallel diode required) |
| Lead-Free | — | Yes |