IRF1405PBF vs IRFP2907PBF Comparison
Detailed side-by-side comparison of IRF1405PBF by Infineon and IRFP2907PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF1405PBF | IRFP2907PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.42 | $2.45 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number Suffix | PbF (lead-free, RoHS compliant) | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | HEXFET (Stripe Planar cell structure) | HEXFET Stripe Planar DMOS (N-Channel) |
| Drain-Source Voltage (V_DS) | 55 V | β |
| Continuous Drain Current (I_D, Tc=25C) | 169 A | β |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current rating] | β |
| Maximum Power Dissipation (P_D, Tc=25C) | 330 W | β |
| R_DS(on) Maximum | 5.3 mOhm @ V_GS = 10 V | β |
| Gate Threshold Voltage (V_GS(th)) | 2.0 V to 4.0 V | β |
| Maximum Gate-Source Voltage (V_GS) | [DATA_NEEDED: maximum V_GS rating] | β |
| Operating Junction Temperature (T_J max) | 175 C | β |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | β |
| Package | TO-220AB (through-hole) | β |
| Mounting Type | Through Hole | β |
| Qualification | JEDEC qualified, optimized for switching below 100 kHz | β |
| RoHS Status | PbF suffix indicates lead-free / RoHS compliant | β |
| Single Pulse Avalanche Energy (E_AS) | [DATA_NEEDED: avalanche energy rating] | β |
| Thermal Resistance Junction-to-Case (R_theta_JC) | [DATA_NEEDED: thermal resistance R_theta_JC] | β |
| Part Number | β | IRFP2907PBF |
| Drain-to-Source Voltage (V_DSS) | β | 75 V |
| Continuous Drain Current (I_D) at T_C = 25 C | β | 209 A |
| Static Drain-to-Source On-Resistance (R_DS(on)) | β | 4.5 mOhm at V_GS = 10 V |
| Power Dissipation (P_D) at T_C = 25 C | β | 470 W |
| Total Gate Charge (Q_g) | β | 410 nC |
| Maximum Junction Operating Temperature | β | +175 C |
| Package / Mounting Type | β | TO-247AC (Through Hole) |
| Pin Count | β | 3 (Gate, Drain, Source) |
| RoHS Compliance | β | Yes (Pb-free) |
| Avalanche Rated | β | Yes (repetitive avalanche rated) |
| Body Diode | β | Integral (no external anti-parallel diode required) |
| Lead-Free | β | Yes |