IRF1405PBF vs IRFP2907PBF 对比

详细并排对比 IRF1405PBF 出自 Infineon 和 IRFP2907PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF1405PBF IRFP2907PBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.42 $2.45
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number Suffix PbF (lead-free, RoHS compliant) —
晶体管类型 N-Channel MOSFET —
Technology HEXFET (Stripe Planar cell structure) HEXFET Stripe Planar DMOS (N-Channel)
Drain-Source Voltage (V_DS) 55 V —
Continuous Drain Current (I_D, Tc=25C) 169 A —
Continuous Drain Current (I_D, Tc=100C) [DATA_NEEDED: I_D at Tc=100C] —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current rating] —
Maximum Power Dissipation (P_D, Tc=25C) 330 W —
R_DS(on) Maximum 5.3 mOhm @ V_GS = 10 V —
Gate Threshold Voltage (V_GS(th)) 2.0 V to 4.0 V —
Maximum Gate-Source Voltage (V_GS) [DATA_NEEDED: maximum V_GS rating] —
Operating Junction Temperature (T_J max) 175 C —
Storage Temperature Range [DATA_NEEDED: storage temperature range] —
封装 TO-220AB (through-hole) —
安装类型 Through Hole —
Qualification JEDEC qualified, optimized for switching below 100 kHz —
RoHS 状态 PbF suffix indicates lead-free / RoHS compliant —
Single Pulse Avalanche Energy (E_AS) [DATA_NEEDED: avalanche energy rating] —
Thermal Resistance Junction-to-Case (R_theta_JC) [DATA_NEEDED: thermal resistance R_theta_JC] —
Part Number — IRFP2907PBF
Drain-to-Source Voltage (V_DSS) — 75 V
Continuous Drain Current (I_D) at T_C = 25 C — 209 A
Static Drain-to-Source On-Resistance (R_DS(on)) — 4.5 mOhm at V_GS = 10 V
Power Dissipation (P_D) at T_C = 25 C — 470 W
Total Gate Charge (Q_g) — 410 nC
Maximum Junction Operating Temperature — +175 C
Package / Mounting Type — TO-247AC (Through Hole)
引脚数量 — 3 (Gate, Drain, Source)
RoHS Compliance — Yes (Pb-free)
Avalanche Rated — Yes (repetitive avalanche rated)
Body Diode — Integral (no external anti-parallel diode required)
Lead-Free — Yes

数据手册与资源

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