IRF4905PBF vs IRF5305PBF Comparaison
Comparaison détaillée côte à côte de IRF4905PBF par Infineon et IRF5305PBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRF4905PBF | IRF5305PBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,95 | $0,51 |
| FET Type | P-Channel | P-Channel |
| Technology | HEXFET (IR MOSFET) | HEXFET (planar DMOS) |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC | -74 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC | 200 W | — |
| On-Resistance RDS(on) max at VGS=-10V | 20 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | — |
| Total Gate Charge (Qg) | 120 nC | 42 nC (typical) |
| Plage de température de fonctionnement | -55 °C to +175 °C (junction) | — |
| Boîtier | TO-220AB (through-hole) | TO-220AB (through-hole, 3-pin + tab) |
| Pin Configuration | Gate - Drain - Source (left to right) | — |
| Type de montage | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free, RoHS compliant) | — |
| Niveau MSL | 1 (not moisture-sensitive for TO-220) | — |
| Drain-to-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | -31 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Maximum Power Dissition (PD) at TC=25C | — | 110 W |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V | — | 60 mOhm (typical) |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A | — | [DATA_NEEDED: max RDS(on) at -10V] |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Turn-On Delay Time (td(on)) | — | [DATA_NEEDED: td(on)] |
| Turn-Off Delay Time (td(off)) | — | [DATA_NEEDED: td(off)] |
| Thermal Resistance, Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC] |
| Thermal Resistance, Junction-to-Ambient (RthJA) | — | [DATA_NEEDED: RthJA] |
| Température de jonction en fonctionnement | — | -55C to +175C |
| Lead-Free Plating (PBF suffix) | — | Yes (Pb-free) |
| Statut RoHS | — | Compliant |