IRF4905PBF vs IRF5305PBF Сравнение

Подробное сравнение бок о бок IRF4905PBF от Infineon и IRF5305PBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.

Infineon
IRF4905PBF IRF4905PBF - 55V P-Channel 74A HEXFET MOSFET | Infineon

IRF4905PBF - 55V P-Channel 74A HEXFET MOSFET | Infineon

IRF4905PBF ✓ Активен
Infineon
IRF5305PBF IRF5305PBF - 55V P-Ch HEXFET MOSFET 31A TO-220 | Infineon

IRF5305PBF - 55V P-Ch HEXFET MOSFET 31A TO-220 | Infineon

IRF5305PBF ✓ Активен

Сравнение характеристик

Параметр IRF4905PBF IRF5305PBF
Бренд Infineon Infineon
Категория MOSFETs MOSFETs
Статус жизненного цикла Активен Активен
Наличие In Stock In Stock
Цена за единицу (USD) $0,95 $0,51
FET Type P-Channel P-Channel
Technology HEXFET (IR MOSFET) HEXFET (planar DMOS)
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at TC -74 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC 200 W —
On-Resistance RDS(on) max at VGS=-10V 20 mΩ —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] —
Total Gate Charge (Qg) 120 nC 42 nC (typical)
Диапазон рабочих температур -55 °C to +175 °C (junction) —
Корпус TO-220AB (through-hole) TO-220AB (through-hole, 3-pin + tab)
Pin Configuration Gate - Drain - Source (left to right) —
Тип монтажа Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
Уровень MSL 1 (not moisture-sensitive for TO-220) —
Drain-to-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TC=25C — -31 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Maximum Power Dissition (PD) at TC=25C — 110 W
Gate-to-Source Voltage (VGS) max — ±20 V
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V — 60 mOhm (typical)
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A — [DATA_NEEDED: max RDS(on) at -10V]
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Turn-On Delay Time (td(on)) — [DATA_NEEDED: td(on)]
Turn-Off Delay Time (td(off)) — [DATA_NEEDED: td(off)]
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC]
Thermal Resistance, Junction-to-Ambient (RthJA) — [DATA_NEEDED: RthJA]
Рабочая температура перехода — -55C to +175C
Lead-Free Plating (PBF suffix) — Yes (Pb-free)
Статус RoHS — Compliant

Даташиты & ресурсы

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